Ti Thin(钛薄)研究综述
Ti Thin 钛薄 - The sputtered a-Si/Ti thin-film was characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), and UV–visible absorption spectroscopy. [1] This essay begins to explore the philosophical grounds on which Chinese literati thinkers came to legitimate, and in some cases value, alternative ways of life in the early modern era (sixteenth and seventeenth centuries). [2] First, Giannotti thinks that the standard version of the powerful qualities view can be differentiated from the pure powers view. [3]通过扫描电子显微镜(SEM)、X射线衍射(XRD)和紫外-可见吸收光谱对溅射的a-Si/Ti薄膜进行了表征。 [1] 本文开始探讨中国文人思想家在现代早期(16 和 17 世纪)合法化并在某些情况下重视替代生活方式的哲学基础。 [2] 首先,詹诺蒂认为,标准版本的强大品质观可以与纯权力观区分开来。 [3]
ti thin film 钛薄膜
By contrast, Si3N4 and Ti thin films of high elastic modulus were deposited on GaAs and glass substrates of low elastic modulus, respectively. [1] We impinge a circularly polarized Gaussian beam on TI thin film substrate and calculate the lateral and angular GH shifts under partial reflection conditions. [2] ABSTRACT Crystallite-size-dependent lattice expansion of the hcp Ti phase has been observed by X-ray diffraction of polycrystalline Ti thin films. [3] However, previous reports have only demonstrated inefficient wavefront control based on binary metasurfaces that were digitalized on a TI thin film or non-directional surface plasmon polariton (SPP) excitation. [4] Experimentally, nanotwinned Ag films with thicknesses ranging from 2 to 8 µm and a strong (111) preferred orientation were sputtered on Si (100) wafers with and without a Ti thin film. [5] In the present work, the microstructural characteristics, martensitic transformation behavior, and mechanical performance of NiTi thin films irradiated with different proton fluences were investigated. [6] Here, we report on the magnetic-field induced helicity dependent photogalvanic effect (MHPGE) of 3D TI thin films Bi 2Te 3 or (Bi xSb 1−x) 2Te 3 of different thicknesses excited by near-infrared (1064 nm) under an in-plane magnetic field. [7] After cold plasma treatment to enhanced adhesion, Ti thin films were deposited by planar magnetron sputtering and TiO2 thin films by reactive magnetron sputtering in an Ar-O2 gas atmosphere. [8] We propose an ultra-wideband (UWB) solar energy absorber composed of a Ti ring and SiO2-Si3N4-Ti thin films. [9] Nanoscale NiTi thin films are highly suitable for high frequency thermal actuation in microelectromechanical devices because of their small thermal mass and large surface-to-volume ratios. [10] In the present paper the development of surface morphology of double layered Cu/Ti thin film heterostructure with different composition and thickness has been studied by using the phase field method. [11] The formation of laser-induced periodic surface structures (LIPSS) on Ti thin films, their phase and stoichiometric evolution, as a function of well below ablation threshold laser fluence, and the number of pulses, is investigated. [12] The results demonstrate that grain growth is significantly suppressed in the UFG pure Ti thin film compared to bulk material. [13] The purpose of this work is to assess the crystallization kinetic properties of the direct current (DC) magnetron sputtered NiTi thin films. [14] Among several types of fabrication techniques for NiTi thin films, magnetron sputtering, which yields a better homogeneous film, has been discussed. [15] The influence of oxygen diffusion phenomena of the bottom layer of TiO2 to the upper layer of Ti thin films at different oxidation temperatures on structural, optical, and photocatalytic performance was investigated. [16] We have studied the characteristics of different metastable states in NbTi thin film deposited on sapphire substrate in a region very close to the transition temperature T $$_{c}$$ , which was estimated to be about 7. [17] NiTi thin films showed superplasticity with recovery strain up to 8%, however their strongly non-linear elasticity caused imprecise position control in MEMS requiring immediate and progressive control. [18] The average particle size of the CoTi thin films was calculated using the Atomic Force Microscopy image. [19] The present investigations is based on annealing heat treatment of co-sputtered Ni–Ti thin films and its effect on structure, morphology, composition, phase formations, intermetallic precipitate formation, and nano-mechanical properties. [20] Meanwhile, the hysteresis loops at ambient temperature demonstrate that in Ni-Co-Mn-Ti thin films the ferromagnetic contribution increases at the expense of diamagnetic one as DT increases. [21] 2–3 nm of in situ deposited Al on top of pristine TI thin films immediately oxidizes after taking the sample to ambient conditions. [22] We experimentally analyze different growth regimes of Ti thin films associated to the existence of kinetic energy-induced relaxation mechanisms in the material's network when operating at oblique geometries. [23] Silicon wafers with Ti thin films (thickness: 40 nm) covered with Au thin films (thickness: 4 nm) as passivation layers were bonded at room temperature by surface activated bonding. [24] In this paper, Ti thin films were prepared by high-power pulsed magnetron sputtering, and the texture of Ti t. [25] We employ micro-Raman and tip-enhanced Raman spectroscopy to examine three different mechanisms of symmetry breaking in Bi2Te3 TI thin films: surface plasmon generation, charge transfer, and application of a periodic strain potential. [26] NiTi thin films with robust shape memory effects and low deposition temperatures are greatly desired for microelectronic devices. [27] 0 nm s−1 agreed very well with the experimental data of the deposited Mo and Ti thin films. [28] The persistent charge current on the ring of the TI thin film changes sign from positive to negative approaching maximal saturated values at large magnetic fluxes. [29] A particular wafer processing step involves deposition of a Ti thin film (˜6 nm to ˜13 nm) on Si, under processing conditions intended to form a silicide with specific electrical properties. [30] Here, we report on the selective area growth of (Bi,Sb)2Te3 TI thin films and stencil lithography of superconductive Nb for a full in situ fabrication of S–TI hybrid devices via molecular-beam epitaxy. [31] In order to check the capability of the platform, with regard to new material classes and applications, we performed measurements of the electrical conductivity σ, thermal conductivity λ and Seebeck coefficient S of two 100 nm Au and Ti thin film samples with considerably larger thermal and electrical transport values. [32] Within the current work, MoAlTi thin films have been developed and deposited by d. [33] Using molecular beam epitaxy for the growth of doped (Sb,Bi)2(Se,Te)3 TI thin films, high doping concentrations can be achieved while preserving their high crystalline quality. [34] A promising avenue of research for the development of functional TI devices has involved doping of three-dimensional (3D) TI thin film and bulk materials with magnetic elements. [35] A new anode material of Sn-Ti thin film was successfully prepared by magnetron co-sputtering of two separate targets at the atmosphere of Ar at normal temperature. [36] The NiTiCu film can be used for Micro Electro Mechanical System (MEMS) application considering the power requirement will be low when compared to NiTi thin film and also can be used for various applications. [37] , oxygen-free Pd/Ti thin film, for evacuating residual H2 and CO. [38] The electrochemical studies of the Ti thin films coated at a lower working pressure (0. [39] Oxygen-free Pd/Ti thin films have been developed as novel nonevaporable getter coatings for ultrahigh vacuum (UHV) chamber walls, which can maintain high pumping speed even after many cycles of air-vent and only require activation at a relatively low temperature of 133 ° C. [40] Surface properties of Ti thin films prepared via radio frequency (RF) magnetron sputtering at various deposition times are investigated by fractal analyze. [41] Ti thin films were deposited on the AlN substrates by direct-current magnetron sputtering at temperatures ranging from room temperature to 450 °C. [42] WO3:Mo and WO3:Ti thin films have been deposited on FTO/Glass substrates by the pulsed chemical spray technique at a substrate temperature of Ts = 450°C. [43] According to the results of the study, the performance of SBTi thin films are improved by suitable Ca doping. [44] As compared to the pure Cu and Ti thin films, the prepared composite exhibited improved hardness and better elasticity reflected in lower values of the Young's modulus. [45] Rapid, low-cost preparation of large-area TI thin films compatible with conventional semiconductor technology is key to the practical applications of TIs. [46] In this research, glassy Ni–Ti thin films were sputtered on a flexible substrate (Kapton) using direct current (DC) magnetron sputtering system at ambient temperature. [47] We deposited the AlN on Si (100), Si (111), amorphous SiO2, and a (001) preferentially oriented Ti thin film and compared their crystallographic, optical, and piezoelectric properties. [48] In this work, cohesive and adhesive properties of Ti thin films on polyimide substrates were studied systematically as a function of grain size by in situ optical microscopy, resistance measurements and synchrotron X-ray diffraction under uniaxial tensile testing. [49] The Ti/TiO2 junction is prepared by controlled oxidation of a Ti thin film, previously deposited on a fused silica substrate. [50]相比之下,高弹性模量的 Si3N4 和 Ti 薄膜分别沉积在低弹性模量的 GaAs 和玻璃基板上。 [1] 我们将圆偏振高斯光束撞击在 TI 薄膜基板上,并计算部分反射条件下的横向和角 GH 偏移。 [2] 摘要 通过多晶钛薄膜的 X 射线衍射已经观察到 hcp Ti 相的微晶尺寸依赖性晶格膨胀。 [3] 然而,以前的报告仅证明了基于在 TI 薄膜或非定向表面等离子体激元 (SPP) 激发上数字化的二元超表面的低效波前控制。 [4] 实验上,在有和没有钛薄膜的硅(100)晶片上溅射厚度为 2 到 8 微米和强(111)择优取向的纳米孪晶银薄膜。 [5] 在目前的工作中,研究了不同质子通量辐照的 NiTi 薄膜的微观结构特征、马氏体转变行为和机械性能。 [6] 在这里,我们报告了由近红外(1064 nm)激发的不同厚度的 3D TI 薄膜 Bi 2Te 3 或 (Bi xSb 1−x) 2Te 3 在 in平面磁场。 [7] 在冷等离子体处理以增强附着力后,在 Ar-O2 气体气氛中通过平面磁控溅射沉积 Ti 薄膜,并通过反应磁控溅射沉积 TiO2 薄膜。 [8] 我们提出了一种由 Ti 环和 SiO2-Si3N4-Ti 薄膜组成的超宽带 (UWB) 太阳能吸收器。 [9] 纳米级 NiTi 薄膜非常适合微机电设备中的高频热驱动,因为它们的热质量小,表面积与体积比大。 [10] 本文采用相场法研究了不同成分和厚度的双层Cu/Ti薄膜异质结构的表面形貌发展。 [11] 研究了钛薄膜上激光诱导周期性表面结构 (LIPSS) 的形成、它们的相位和化学计量演变,作为远低于烧蚀阈值激光能量密度和脉冲数量的函数。 [12] 结果表明,与块状材料相比,UFG 纯 Ti 薄膜中的晶粒生长受到显着抑制。 [13] 这项工作的目的是评估直流 (DC) 磁控溅射 NiTi 薄膜的结晶动力学特性。 [14] 在 NiTi 薄膜的几种制造技术中,已经讨论了产生更好均匀薄膜的磁控溅射。 [15] 研究了不同氧化温度下TiO2底层至上层Ti薄膜的氧扩散现象对结构、光学和光催化性能的影响。 [16] 我们研究了在非常接近转变温度 T 的区域内沉积在蓝宝石衬底上的 NbTi 薄膜中不同亚稳态的特性 $$_{c}$$ , 估计约为 7。 [17] NiTi 薄膜显示出超塑性,恢复应变高达 8%,但它们强烈的非线性弹性导致 MEMS 中的位置控制不精确,需要立即和渐进式控制。 [18] CoTi 薄膜的平均粒径是使用原子力显微镜图像计算的。 [19] 目前的研究基于共溅射 Ni-Ti 薄膜的退火热处理及其对结构、形貌、组成、相形成、金属间化合物沉淀物形成和纳米机械性能的影响。 [20] 同时,环境温度下的磁滞回线表明,在 Ni-Co-Mn-Ti 薄膜中,随着 DT 的增加,铁磁贡献的增加以反磁性贡献为代价。 [21] 将样品置于环境条件下后,在原始 TI 薄膜顶部原位沉积 2-3 nm 的铝会立即氧化。 [22] 我们通过实验分析了在倾斜几何形状下操作时,与材料网络中存在动能诱导弛豫机制相关的 Ti 薄膜的不同生长方式。 [23] 在室温下通过表面活化键合将具有覆盖有作为钝化层的 Au 薄膜(厚度:40 nm)的 Ti 薄膜(厚度:40 nm)的硅晶片进行键合。 [24] 本文采用高功率脉冲磁控溅射法制备了Ti薄膜,并对Ti的织构进行了研究。 [25] 我们采用微拉曼和尖端增强拉曼光谱来检查 Bi2Te3 TI 薄膜中三种不同的对称破缺机制:表面等离子激元产生、电荷转移和周期性应变势的应用。 [26] 微电子器件非常需要具有强大的形状记忆效应和低沉积温度的 NiTi 薄膜。 [27] 0 nm s-1 与沉积的 Mo 和 Ti 薄膜的实验数据非常吻合。 [28] TI 薄膜环上的持续充电电流的符号从正变为负,在大磁通量下接近最大饱和值。 [29] 特定的晶片加工步骤涉及在旨在形成具有特定电学特性的硅化物的加工条件下在Si上沉积Ti薄膜(~6nm至~13nm)。 [30] 在这里,我们报告了 (Bi,Sb)2Te3 TI 薄膜的选择性区域生长和超导 Nb 的模板光刻,用于通过分子束外延完全原位制造 S-TI 混合器件。 [31] 为了检查平台的能力,关于新材料类别和应用,我们测量了两个 100 nm Au 和 Ti 薄膜样品的电导率 σ、热导率 λ 和塞贝克系数 S,这些样品具有相当大的热和电气传输值。 [32] 在目前的工作中,MoAlTi 薄膜已经由 d. 开发和沉积。 [33] 使用分子束外延生长掺杂的 (Sb,Bi)2(Se,Te)3 TI 薄膜,可以在保持高结晶质量的同时实现高掺杂浓度。 [34] 开发功能性 TI 器件的一个有前途的研究途径涉及用磁性元素掺杂三维 (3D) TI 薄膜和块状材料。 [35] 在常温Ar气氛下,通过磁控管共溅射两个单独的靶材,成功制备了一种新型的Sn-Ti薄膜阳极材料。 [36] 考虑到与 NiTi 薄膜相比功率要求较低,NiTiCu 薄膜可用于微机电系统 (MEMS) 应用,并且还可用于各种应用。 [37] , 无氧 Pd/Ti 薄膜,用于排出残留的 H2 和 CO。 [38] 在较低工作压力下涂覆的 Ti 薄膜的电化学研究 (0. [39] 无氧 Pd/Ti 薄膜已被开发为用于超高真空 (UHV) 室壁的新型非蒸发吸气剂涂层,即使在多次排气循环后仍可保持高抽速,并且仅需要在相对较低的温度下激活 133 ℃。 [40] 通过分形分析研究了通过射频 (RF) 磁控溅射在不同沉积时间制备的 Ti 薄膜的表面性质。 [41] 通过直流磁控溅射在室温至 450°C 的温度范围内将 Ti 薄膜沉积在 AlN 基板上。 [42] WO3:Mo 和 WO3:Ti 薄膜已通过脉冲化学喷涂技术在 Ts = 450°C 的基板温度下沉积在 FTO/玻璃基板上。 [43] 根据研究结果,通过适当的Ca掺杂,SBTi薄膜的性能得到改善。 [44] 与纯铜和钛薄膜相比,制备的复合材料表现出更高的硬度和更好的弹性,这反映在较低的杨氏模量值上。 [45] 快速、低成本地制备与传统半导体技术兼容的大面积 TI 薄膜是 TI 实际应用的关键。 [46] 在这项研究中,在环境温度下使用直流 (DC) 磁控溅射系统在柔性基板 (Kapton) 上溅射玻璃态 Ni-Ti 薄膜。 [47] 我们将 AlN 沉积在 Si (100)、Si (111)、非晶 SiO2 和 (001) 优先取向的 Ti 薄膜上,并比较了它们的晶体学、光学和压电特性。 [48] 在这项工作中,通过原位光学显微镜、电阻测量和单轴拉伸测试下的同步加速器 X 射线衍射,系统地研究了聚酰亚胺基板上 Ti 薄膜的内聚和粘附性能与晶粒尺寸的关系。 [49] Ti/TiO2 结是通过对先前沉积在熔融石英基板上的 Ti 薄膜进行受控氧化来制备的。 [50]
ti thin layer 薄层
These systems of mirrors are constructed for an event angle from 0° to 45° and are modeled with interference filters-like multi thin layer dielectric coatings. [1] To do that, several Cu and Ti thin layers were alternatively deposited by Ar + sputtering on silicon wafers and, subsequently, oxidized by thermal annealing. [2] Cu-TiO2 doped Ti thin layer was prepared by anodizing and electrodeposition. [3]这些反射镜系统针对 0° 到 45° 的事件角构建,并使用类似干涉滤光片的多层薄层介电涂层进行建模。 [1] 为此,通过 Ar + 溅射在硅晶片上交替沉积几个 Cu 和 Ti 薄层,然后通过热退火进行氧化。 [2] 通过阳极氧化和电沉积制备了Cu-TiO2掺杂的Ti薄层。 [3]