Spectroscopy Depth(光谱深度)研究综述
Spectroscopy Depth 光谱深度 - X-ray photoelectron spectroscopy depth-profile analysis reveals that oxygen contamination is concentrated at the surface because of surface oxidation of the MoN x film under ambient conditions. [1] Partial least squares (PLS) regression was used to establish a relation between the UV–Vis spectra and film thickness measurements using Auger electron spectroscopy depth profiles. [2] As a follow up on a previous paper on the quantitative evaluation of sputtering induced surface roughness and its influence on Auger electron spectroscopy depth profiling of polycrystalline Ni/Cu multilayers thin films, the ion sputtering induced surface roughness of these multilayered Ni/Cu polycrystalline thin films under low energy (0. [3] X-ray photoelectron spectroscopy depth profiling reveals a distinct coherence of the growth of the solid electrolyte interphase with the phases of the lithiated graphite. [4] The elemental composition of the surface and the bulk film was analyzed by X-ray photoemission spectroscopy depth profiling. [5] Different CGM composition profiles can be controlled by the heating ramp rate, and validated by the X-ray photoelectron spectroscopy depth-profiling measurements. [6] The model shows a good prediction performance in the range of 0–30 nm compared to Auger electron spectroscopy depth profiles as a reference method. [7] X‐ray photoelectron spectroscopy depth profiling is a convenient tool to monitor the fullerene concentration in passivation layers at a SnO2 interface. [8] The secondary ion mass spectroscopy depth profile indicated that the carbon content in GaN layer can be tuned further by optimizing the sputtering temperature of AlN CL due to the better capping ability of high crystalline quality AlN CL on GI being achieved at higher temperature. [9] The chemical state of nitrogen in the TiO2 matrix was investigated by X-ray photoelectron spectroscopy depth profile analysis. [10] The diffusion processes occurring at the interface of CoFeB/IrMn are analyzed in detail utilizing X-ray photoemission spectroscopy depth profiling technique and the results are compared to those obtained by standard vacuum oven annealing and correlated to the magnetic properties investigated by magneto-optical Kerr effect magnetometry. [11] Cross-sectional energy-dispersive X-ray spectroscopy and ultraviolet photoemission spectroscopy depth profiling directly vizualize the donor-acceptor vertical stratification with a precision of 1-2 nm. [12] X-ray photoelectron spectroscopy depth profile analysis was employed to demonstrate that surface modified ZnO effectively hinders the diffusion of indium from ITO to active layer. [13] Here, using transmission electron microscopy and the X-ray photoelectron spectroscopy depth profile technique, we resolved the amorphous structure on the atomic scale and determined the thickness of the tribo-induced silica layer. [14] X-ray photoelectron spectroscopy depth profiling directly shows the proportion of oxygen element in the lattice of NCM333 and the impurities in different depths, revealing the degree of degradation. [15]X 射线光电子能谱深度剖面分析表明，由于环境条件下 MoN x 膜的表面氧化，氧污染集中在表面。 [1] 偏最小二乘 (PLS) 回归用于建立 UV-Vis 光谱和使用俄歇电子能谱深度剖面测量的薄膜厚度之间的关系。 [2] 作为先前关于溅射诱导表面粗糙度定量评估及其对多晶 Ni/Cu 多层薄膜俄歇电子能谱深度剖析的影响的论文的后续，这些多层 Ni/Cu 多晶薄膜的离子溅射诱导表面粗糙度在低能量下（0. [3] X 射线光电子能谱深度剖析揭示了固体电解质界面相的生长与锂化石墨相的明显相干性。 [4] 通过 X 射线光电子能谱深度剖析分析表面和体膜的元素组成。 [5] 不同的 CGM 成分分布可以通过加热斜率控制，并通过 X 射线光电子能谱深度分布测量进行验证。 [6] 与作为参考方法的俄歇电子能谱深度剖面相比，该模型在 0-30 nm 范围内显示出良好的预测性能。 [7] X 射线光电子能谱深度剖析是监测 SnO2 界面钝化层中富勒烯浓度的便捷工具。 [8] 二次离子质谱深度分布表明，通过优化 AlN CL 的溅射温度，可以进一步调整 GaN 层中的碳含量，因为在更高温度下，高结晶质量的 AlN CL 在 GI 上具有更好的覆盖能力。 [9] 通过 X 射线光电子能谱深度剖面分析研究了 TiO2 基质中氮的化学状态。 [10] 利用 X 射线光电子能谱深度剖析技术详细分析了发生在 CoFeB/IrMn 界面处的扩散过程，并将结果与通过标准真空烘箱退火获得的结果进行了比较，并与通过磁光克尔效应研究的磁性能相关联磁力计。 [11] 横截面能量色散 X 射线光谱和紫外光电子能谱深度剖析直接可视化供体-受体垂直分层，精度为 1-2 nm。 [12] X 射线光电子能谱深度剖面分析用于证明表面改性的 ZnO 有效地阻碍了铟从 ITO 向活性层的扩散。 [13] 在这里，我们使用透射电子显微镜和 X 射线光电子能谱深度剖面技术，在原子尺度上解析了无定形结构并确定了摩擦诱导的二氧化硅层的厚度。 [14] X射线光电子能谱深度剖析直接显示了NCM333晶格中氧元素的比例以及不同深度的杂质，揭示了降解程度。 [15]
Photoelectron Spectroscopy Depth 光电子能谱深度
X-ray photoelectron spectroscopy depth-profile analysis reveals that oxygen contamination is concentrated at the surface because of surface oxidation of the MoN x film under ambient conditions. [1] X-ray photoelectron spectroscopy depth profiling reveals a distinct coherence of the growth of the solid electrolyte interphase with the phases of the lithiated graphite. [2] Different CGM composition profiles can be controlled by the heating ramp rate, and validated by the X-ray photoelectron spectroscopy depth-profiling measurements. [3] X‐ray photoelectron spectroscopy depth profiling is a convenient tool to monitor the fullerene concentration in passivation layers at a SnO2 interface. [4] The chemical state of nitrogen in the TiO2 matrix was investigated by X-ray photoelectron spectroscopy depth profile analysis. [5] X-ray photoelectron spectroscopy depth profile analysis was employed to demonstrate that surface modified ZnO effectively hinders the diffusion of indium from ITO to active layer. [6] Here, using transmission electron microscopy and the X-ray photoelectron spectroscopy depth profile technique, we resolved the amorphous structure on the atomic scale and determined the thickness of the tribo-induced silica layer. [7] X-ray photoelectron spectroscopy depth profiling directly shows the proportion of oxygen element in the lattice of NCM333 and the impurities in different depths, revealing the degree of degradation. [8]X 射线光电子能谱深度剖面分析表明，由于环境条件下 MoN x 膜的表面氧化，氧污染集中在表面。 [1] X 射线光电子能谱深度剖析揭示了固体电解质界面相的生长与锂化石墨相的明显相干性。 [2] 不同的 CGM 成分分布可以通过加热斜率控制，并通过 X 射线光电子能谱深度分布测量进行验证。 [3] X 射线光电子能谱深度剖析是监测 SnO2 界面钝化层中富勒烯浓度的便捷工具。 [4] 通过 X 射线光电子能谱深度剖面分析研究了 TiO2 基质中氮的化学状态。 [5] X 射线光电子能谱深度剖面分析用于证明表面改性的 ZnO 有效地阻碍了铟从 ITO 向活性层的扩散。 [6] 在这里，我们使用透射电子显微镜和 X 射线光电子能谱深度剖面技术，在原子尺度上解析了无定形结构并确定了摩擦诱导的二氧化硅层的厚度。 [7] X射线光电子能谱深度剖析直接显示了NCM333晶格中氧元素的比例以及不同深度的杂质，揭示了降解程度。 [8]
Electron Spectroscopy Depth 电子能谱深度
Partial least squares (PLS) regression was used to establish a relation between the UV–Vis spectra and film thickness measurements using Auger electron spectroscopy depth profiles. [1] As a follow up on a previous paper on the quantitative evaluation of sputtering induced surface roughness and its influence on Auger electron spectroscopy depth profiling of polycrystalline Ni/Cu multilayers thin films, the ion sputtering induced surface roughness of these multilayered Ni/Cu polycrystalline thin films under low energy (0. [2] The model shows a good prediction performance in the range of 0–30 nm compared to Auger electron spectroscopy depth profiles as a reference method. [3]偏最小二乘 (PLS) 回归用于建立 UV-Vis 光谱和使用俄歇电子能谱深度剖面测量的薄膜厚度之间的关系。 [1] 作为先前关于溅射诱导表面粗糙度定量评估及其对多晶 Ni/Cu 多层薄膜俄歇电子能谱深度剖析的影响的论文的后续，这些多层 Ni/Cu 多晶薄膜的离子溅射诱导表面粗糙度在低能量下（0. [2] 与作为参考方法的俄歇电子能谱深度剖面相比，该模型在 0-30 nm 范围内显示出良好的预测性能。 [3]
Photoemission Spectroscopy Depth 光发射光谱深度
The elemental composition of the surface and the bulk film was analyzed by X-ray photoemission spectroscopy depth profiling. [1] The diffusion processes occurring at the interface of CoFeB/IrMn are analyzed in detail utilizing X-ray photoemission spectroscopy depth profiling technique and the results are compared to those obtained by standard vacuum oven annealing and correlated to the magnetic properties investigated by magneto-optical Kerr effect magnetometry. [2] Cross-sectional energy-dispersive X-ray spectroscopy and ultraviolet photoemission spectroscopy depth profiling directly vizualize the donor-acceptor vertical stratification with a precision of 1-2 nm. [3]通过 X 射线光电子能谱深度剖析分析表面和体膜的元素组成。 [1] 利用 X 射线光电子能谱深度剖析技术详细分析了发生在 CoFeB/IrMn 界面处的扩散过程，并将结果与通过标准真空烘箱退火获得的结果进行了比较，并与通过磁光克尔效应研究的磁性能相关联磁力计。 [2] 横截面能量色散 X 射线光谱和紫外光电子能谱深度剖析直接可视化供体-受体垂直分层，精度为 1-2 nm。 [3]
spectroscopy depth profiling 光谱深度剖析
As a follow up on a previous paper on the quantitative evaluation of sputtering induced surface roughness and its influence on Auger electron spectroscopy depth profiling of polycrystalline Ni/Cu multilayers thin films, the ion sputtering induced surface roughness of these multilayered Ni/Cu polycrystalline thin films under low energy (0. [1] X-ray photoelectron spectroscopy depth profiling reveals a distinct coherence of the growth of the solid electrolyte interphase with the phases of the lithiated graphite. [2] The elemental composition of the surface and the bulk film was analyzed by X-ray photoemission spectroscopy depth profiling. [3] X‐ray photoelectron spectroscopy depth profiling is a convenient tool to monitor the fullerene concentration in passivation layers at a SnO2 interface. [4] The diffusion processes occurring at the interface of CoFeB/IrMn are analyzed in detail utilizing X-ray photoemission spectroscopy depth profiling technique and the results are compared to those obtained by standard vacuum oven annealing and correlated to the magnetic properties investigated by magneto-optical Kerr effect magnetometry. [5] Cross-sectional energy-dispersive X-ray spectroscopy and ultraviolet photoemission spectroscopy depth profiling directly vizualize the donor-acceptor vertical stratification with a precision of 1-2 nm. [6] X-ray photoelectron spectroscopy depth profiling directly shows the proportion of oxygen element in the lattice of NCM333 and the impurities in different depths, revealing the degree of degradation. [7]作为先前关于溅射诱导表面粗糙度定量评估及其对多晶 Ni/Cu 多层薄膜俄歇电子能谱深度剖析的影响的论文的后续，这些多层 Ni/Cu 多晶薄膜的离子溅射诱导表面粗糙度在低能量下（0. [1] X 射线光电子能谱深度剖析揭示了固体电解质界面相的生长与锂化石墨相的明显相干性。 [2] 通过 X 射线光电子能谱深度剖析分析表面和体膜的元素组成。 [3] X 射线光电子能谱深度剖析是监测 SnO2 界面钝化层中富勒烯浓度的便捷工具。 [4] 利用 X 射线光电子能谱深度剖析技术详细分析了发生在 CoFeB/IrMn 界面处的扩散过程，并将结果与通过标准真空烘箱退火获得的结果进行了比较，并与通过磁光克尔效应研究的磁性能相关联磁力计。 [5] 横截面能量色散 X 射线光谱和紫外光电子能谱深度剖析直接可视化供体-受体垂直分层，精度为 1-2 nm。 [6] X射线光电子能谱深度剖析直接显示了NCM333晶格中氧元素的比例以及不同深度的杂质，揭示了降解程度。 [7]
spectroscopy depth profile 光谱深度剖面
Partial least squares (PLS) regression was used to establish a relation between the UV–Vis spectra and film thickness measurements using Auger electron spectroscopy depth profiles. [1] The model shows a good prediction performance in the range of 0–30 nm compared to Auger electron spectroscopy depth profiles as a reference method. [2] The secondary ion mass spectroscopy depth profile indicated that the carbon content in GaN layer can be tuned further by optimizing the sputtering temperature of AlN CL due to the better capping ability of high crystalline quality AlN CL on GI being achieved at higher temperature. [3] The chemical state of nitrogen in the TiO2 matrix was investigated by X-ray photoelectron spectroscopy depth profile analysis. [4] X-ray photoelectron spectroscopy depth profile analysis was employed to demonstrate that surface modified ZnO effectively hinders the diffusion of indium from ITO to active layer. [5] Here, using transmission electron microscopy and the X-ray photoelectron spectroscopy depth profile technique, we resolved the amorphous structure on the atomic scale and determined the thickness of the tribo-induced silica layer. [6]偏最小二乘 (PLS) 回归用于建立 UV-Vis 光谱和使用俄歇电子能谱深度剖面测量的薄膜厚度之间的关系。 [1] 与作为参考方法的俄歇电子能谱深度剖面相比，该模型在 0-30 nm 范围内显示出良好的预测性能。 [2] 二次离子质谱深度分布表明，通过优化 AlN CL 的溅射温度，可以进一步调整 GaN 层中的碳含量，因为在更高温度下，高结晶质量的 AlN CL 在 GI 上具有更好的覆盖能力。 [3] 通过 X 射线光电子能谱深度剖面分析研究了 TiO2 基质中氮的化学状态。 [4] X 射线光电子能谱深度剖面分析用于证明表面改性的 ZnO 有效地阻碍了铟从 ITO 向活性层的扩散。 [5] 在这里，我们使用透射电子显微镜和 X 射线光电子能谱深度剖面技术，在原子尺度上解析了无定形结构并确定了摩擦诱导的二氧化硅层的厚度。 [6]