Sb2te3 Thin(Sb2te3 薄)研究综述
Sb2te3 Thin Sb2te3 薄 - The present work aims to investigate the influence of Cu dopants via implantation on the physical properties of Sb2Te3 thin films. [1] We demonstrate the excitation of a propagating surface plasmon with a high plasmonic figure of merit in both amorphous and crystalline phases of Sb2Te3 thin films. [2] Hot energy carrier filtering as a means to improve the thermoelectric (TE) property in Sb2Te3 thin film samples having size-selected Au nanoparticles (NPs) is investigated in the present study. [3] For this, epitaxial 2D-like Sb2Te3 thin films with thicknesses of ∼20 nm were directly grown on conductive p-type Si (111) substrates by pulsed laser deposition. [4] In this work, narrow bandgap Bi2Te3/Sb2Te3 thin film thermophotovoltaic cells were fabricated, and the formation mechanism of Bi2Te3/Sb2Te3 p-n heterojunctions was investigated. [5] The fabricated flexible Sb2Te3 thin films exhibit a power factor of ∼8. [6] Flexible Sb2Te3 thin films, for thermoelectric generator applications, were deposited by DC magnetron sputtering. [7] 2 crystals as well as in Sb2Te3 thin films. [8] In this work, stoichiometric Sb2Te3 thin films with various thicknesses were deposited on a flexible substrate using RF magnetron sputtering. [9] We provide a detailed study of the magnetic state in Cr doped Sb2Te3 thin films using terahertz time-domain spectroscopy (THz-TDS) and electrical transport. [10] Furthermore, by employing a 2D-bonded Sb2Te3 thin film as a seeding layer on Si(111), a 2D growth of GeTe is harnessed. [11]本工作旨在通过注入研究铜掺杂剂对 Sb2Te3 薄膜物理性质的影响。 [1] 我们展示了在 Sb2Te3 薄膜的非晶相和晶相中具有高等离子体品质因数的传播表面等离子体的激发。 [2] 本研究研究了热能载流子过滤作为改善具有尺寸选择的金纳米粒子 (NPs) 的 Sb2Te3 薄膜样品的热电 (TE) 特性的一种手段。 [3] 为此,通过脉冲激光沉积在导电 p 型 Si (111) 衬底上直接生长厚度约为 20 nm 的外延二维类 Sb2Te3 薄膜。 [4] 本工作制备了窄禁带Bi2Te3/Sb2Te3薄膜热光伏电池,并研究了Bi2Te3/Sb2Te3 p-n异质结的形成机理。 [5] 制造的柔性 Sb2Te3 薄膜的功率因数约为 8。 [6] 通过直流磁控溅射沉积用于热电发电机应用的柔性 Sb2Te3 薄膜。 [7] 2 晶体以及 Sb2Te3 薄膜。 [8] 在这项工作中,使用射频磁控溅射将具有各种厚度的化学计量 Sb2Te3 薄膜沉积在柔性基板上。 [9] 我们使用太赫兹时域光谱 (THz-TDS) 和电传输对 Cr 掺杂的 Sb2Te3 薄膜中的磁态进行了详细研究。 [10] 此外,通过采用二维键合的 Sb2Te3 薄膜作为 Si(111) 上的晶种层,利用了 GeTe 的二维生长。 [11]
Flexible Sb2te3 Thin
The fabricated flexible Sb2Te3 thin films exhibit a power factor of ∼8. [1] Flexible Sb2Te3 thin films, for thermoelectric generator applications, were deposited by DC magnetron sputtering. [2]制造的柔性 Sb2Te3 薄膜的功率因数约为 8。 [1] 通过直流磁控溅射沉积用于热电发电机应用的柔性 Sb2Te3 薄膜。 [2]
sb2te3 thin film Sb2te3 薄膜
The present work aims to investigate the influence of Cu dopants via implantation on the physical properties of Sb2Te3 thin films. [1] We demonstrate the excitation of a propagating surface plasmon with a high plasmonic figure of merit in both amorphous and crystalline phases of Sb2Te3 thin films. [2] Hot energy carrier filtering as a means to improve the thermoelectric (TE) property in Sb2Te3 thin film samples having size-selected Au nanoparticles (NPs) is investigated in the present study. [3] For this, epitaxial 2D-like Sb2Te3 thin films with thicknesses of ∼20 nm were directly grown on conductive p-type Si (111) substrates by pulsed laser deposition. [4] In this work, narrow bandgap Bi2Te3/Sb2Te3 thin film thermophotovoltaic cells were fabricated, and the formation mechanism of Bi2Te3/Sb2Te3 p-n heterojunctions was investigated. [5] The fabricated flexible Sb2Te3 thin films exhibit a power factor of ∼8. [6] Flexible Sb2Te3 thin films, for thermoelectric generator applications, were deposited by DC magnetron sputtering. [7] 2 crystals as well as in Sb2Te3 thin films. [8] In this work, stoichiometric Sb2Te3 thin films with various thicknesses were deposited on a flexible substrate using RF magnetron sputtering. [9] We provide a detailed study of the magnetic state in Cr doped Sb2Te3 thin films using terahertz time-domain spectroscopy (THz-TDS) and electrical transport. [10] Furthermore, by employing a 2D-bonded Sb2Te3 thin film as a seeding layer on Si(111), a 2D growth of GeTe is harnessed. [11]本工作旨在通过注入研究铜掺杂剂对 Sb2Te3 薄膜物理性质的影响。 [1] 我们展示了在 Sb2Te3 薄膜的非晶相和晶相中具有高等离子体品质因数的传播表面等离子体的激发。 [2] 本研究研究了热能载流子过滤作为改善具有尺寸选择的金纳米粒子 (NPs) 的 Sb2Te3 薄膜样品的热电 (TE) 特性的一种手段。 [3] 为此,通过脉冲激光沉积在导电 p 型 Si (111) 衬底上直接生长厚度约为 20 nm 的外延二维类 Sb2Te3 薄膜。 [4] 本工作制备了窄禁带Bi2Te3/Sb2Te3薄膜热光伏电池,并研究了Bi2Te3/Sb2Te3 p-n异质结的形成机理。 [5] 制造的柔性 Sb2Te3 薄膜的功率因数约为 8。 [6] 通过直流磁控溅射沉积用于热电发电机应用的柔性 Sb2Te3 薄膜。 [7] 2 晶体以及 Sb2Te3 薄膜。 [8] 在这项工作中,使用射频磁控溅射将具有各种厚度的化学计量 Sb2Te3 薄膜沉积在柔性基板上。 [9] 我们使用太赫兹时域光谱 (THz-TDS) 和电传输对 Cr 掺杂的 Sb2Te3 薄膜中的磁态进行了详细研究。 [10] 此外,通过采用二维键合的 Sb2Te3 薄膜作为 Si(111) 上的晶种层,利用了 GeTe 的二维生长。 [11]