Nanowires Prepared(准备好的纳米线)研究综述
Nanowires Prepared 准备好的纳米线 - On the basis of their components, aspect ratio, and properties, there may be imperceptible connections among hundreds of nanowires prepared by different strategies. [1] Field emission properties of $\mathbf{WO}_{\pmb{3-}\mathbf{x}}$ nanowires prepared on glass substrate were studied. [2] Silicon nanoparticles and nanowires prepared by using different methods were investigated by means of x-ray diffraction (XRD) technique. [3] The nanowires prepared at pH = 11 exhibit rougher surfaces with a diameter of 10–11 nm, and the relevant catalyst has higher electrochemical active area and excellent electrocatalytic performance for oxygen reduction reaction (ORR). [4]根据它们的成分、纵横比和特性，数百条通过不同策略制备的纳米线之间可能存在难以察觉的连接。 [1] 研究了在玻璃基板上制备的$\mathbf{WO}_{\pmb{3-}\mathbf{x}}$纳米线的场发射特性。 [2] 采用 X 射线衍射 (XRD) 技术研究了采用不同方法制备的硅纳米颗粒和纳米线。 [3] 在 pH = 11 下制备的纳米线表面较粗糙，直径为 10-11 nm，相关催化剂具有更高的电化学活性面积和优异的氧还原反应 (ORR) 电催化性能。 [4]
Sic Nanowires Prepared
3C-SiC nanowires prepared at 900 °C have high density stacking faults. [1] KGaA, Weinheim Sintered porous SiC ceramics are modified with SiC nanowires prepared via chemical vapor infiltration (CVI). [2]在 900 °C 制备的 3C-SiC 纳米线具有高密度堆垛层错。 [1] KGaA, Weinheim 烧结多孔 SiC 陶瓷采用通过化学气相渗透 (CVI) 制备的 SiC 纳米线进行改性。 [2]