Modulation Behavior(调制行为)研究综述
Modulation Behavior 调制行为 - Therefore, the modulation behavior of the Fano resonance is not easy to capture at the Dirac point. [1] Finally, the experimental results validate the linear modulation range and demonstrate the modulation behaviors within and out of the linear modulation range. [2] Moreover, the intensity-modulation behaviors of the two orthogonal polarization components in the odd (even) roundtrips are always asynchronous, which confirms additional slower polarization modulations. [3] We find that varying the SiO2 thickness modulates the fluorescent signal of SPCE, its modulation behavior being in agreement with the theoretical simulation of thickness dependent properties of the coupled plasmon waveguide resonance. [4] Besides, the proposed algorithm is not sensitive to the amplitude-modulation behavior, and it shows better precision than the Direct Quadrature (DQ) algorithm, which is an IF identification algorithm of the amplitude-modulated signal. [5] A simple circuit model well explains and predicts this modulation behavior. [6]因此，在狄拉克点不容易捕捉到 Fano 共振的调制行为。 [1] 最后，实验结果验证了线性调制范围，并证明了线性调制范围内外的调制行为。 [2] 此外，奇（偶）次往返中两个正交偏振分量的强度调制行为始终是异步的，这证实了额外的较慢的偏振调制。 [3] 我们发现，改变 SiO2 厚度可以调制 SPCE 的荧光信号，其调制行为与耦合等离子体波导共振的厚度相关特性的理论模拟一致。 [4] 此外，该算法对调幅行为不敏感，比直接正交(DQ)算法具有更好的精度，DQ算法是调幅信号的中频识别算法。 [5] 一个简单的电路模型很好地解释和预测了这种调制行为。 [6]
Luminescence Modulation Behavior 发光调制行为
Sm3+ doped KSr2Nb5O15 (KSN-Sm) textured ceramics with anisotropic photochromic and luminescence modulation behaviors provided a new strategy for the enhancement of anti-counterfeiting ability. [1] Rare earth doped photochromic materials reveal great potential applications in optical memory storage devices due to their excellent reversible luminescence modulation behavior. [2] Moreover, the samples possessed luminescence modulation behavior after polarization, which exhibited obvious grain-orientation dependence. [3] Reversible luminescence modulation behavior upon the photochromic effect endows the photochromic ceramics with great potential in anti-counterfeiting and data storage applications. [4] These findings offer a guide to designing tailored luminescence modulation behavior of luminescent photochromic materials for wide application in optical storage and switching devices. [5]Sm3+掺杂的KSr2Nb5O15（KSN-Sm）织构陶瓷具有各向异性的光致变色和发光调制行为，为增强防伪能力提供了新的策略。 [1] 稀土掺杂的光致变色材料由于其优异的可逆发光调制行为而在光存储设备中显示出巨大的潜在应用。 [2] 此外，样品在极化后具有发光调制行为，表现出明显的晶粒取向依赖性。 [3] 光致变色效应的可逆发光调制行为赋予了光致变色陶瓷在防伪和数据存储应用中的巨大潜力。 [4] 这些发现为设计定制的发光光致变色材料的发光调制行为提供了指导，以广泛应用于光存储和开关设备。 [5]
Load Modulation Behavior
More importantly, this hybrid load modulation behavior can be replicated over a nearly unlimited frequency span. [1] This hybrid PA relies on an input outphasing angle varying with the input power level to obtain the correct load modulation behavior. [2] Given the input parameters selected by the PA designer, a Doherty load modulation behavior is exactly implemented at the current-source reference planes of the transistors by solving for the characteristic impedance of the Doherty quarter-wave transformer and the common load. [3]更重要的是，这种混合负载调制行为可以在几乎无限的频率跨度上复制。 [1] 这种混合 PA 依靠随输入功率电平变化的输入异相角来获得正确的负载调制行为。 [2] 给定 PA 设计人员选择的输入参数，通过求解 Doherty 四分之一波长变压器和公共负载的特性阻抗，可以在晶体管的电流源参考平面上准确地实现 Doherty 负载调制行为。 [3]
Electrostatic Modulation Behavior
Here, the albumen-based electrolyte film shows strong electrostatic modulation behavior with electric double-layer capacitance of ∼3. [1] Conventionally, oxide phototransistors operate at high voltage due to the limited electrostatic modulation behaviors of traditional gate dielectrics. [2]在这里，基于蛋白的电解质膜表现出很强的静电调制行为，双电层电容约为 3。 [1] 传统上，由于传统栅极电介质的静电调制行为有限，氧化物光电晶体管在高压下工作。 [2]