Finfet Technologies(Finfet技术)研究综述
Finfet Technologies Finfet技术 - The performance of the 14-nm planar bulk PMOS is comparable to the performance of the FDSOI and FinFET technologies at the same gate length. [1] Third, this is the first demonstration of integrated power delivery for anti-fuse memory in FinFET technologies. [2] Compared to CMOS and FinFET technologies, the average capacity of the proposed TCAM cell is substantially enhanced. [3] These values can be controlled by reducing the distance between blocks, or, in the case of R, by using larger effective wire widths (using multiple parallel connections in FinFET technologies where wire widths are quantized) to reduce the effective resistance. [4] Then, the industry standard compact model for FinFET technologies (BSIM-CMG) is carefully calibrated to accurately model and reproduce all measurements. [5] Recent progress in CMOS and FinFET technologies have allowed the deployment of multi-task System-on-Programmable Chips (SoPCs) in a single FPGA device. [6] The results are consistent with low-LET particle irradiation findings from previous works that have indicated a strong exponential increase in SEU cross section with supply voltage scaling for FinFET technologies. [7] FinFET technologies are an ideal candidate to tackle this challenging integration, given the excellent balance between density and RF/mm-wave performance that has been recently demonstrated [1]. [8] The purpose of this work is to point out the main differences between a Static Random-Access Memory (SRAM) cells implemented by using Tunnel FET (TFET) and FinFET technologies. [9] The growth in safety-critical applications for automotive electronics and mainstream adoption of FinFET technologies have resulted in significant increase in IC design reliability challenges. [10] In order to design competitive circuits in finFET technologies, a designer must intelligently navigate the plethora of reliability rules, As an example, by understanding the trade-offs between transistor self-heating, Joule-heating due to Irms currents and passing Iavg rules at higher temperatures, designers can optimize the design changes required to meet overall interconnect reliability requirements. [11] Here simulation results confirm that CNTFET has better performance than MOS and FinFET technologies in low-power world. [12] The proposed method is investigated using 32-nm CMOS and FinFET technologies. [13]14nm 平面体 PMOS 的性能可与相同栅极长度下的 FDSOI 和 FinFET 技术的性能相媲美。 [1] 第三，这是 FinFET 技术中反熔丝存储器集成供电的首次演示。 [2] 与 CMOS 和 FinFET 技术相比，所提出的 TCAM 单元的平均容量大大提高。 [3] 这些值可以通过减少块之间的距离来控制，或者在 R 的情况下，通过使用更大的有效线宽（在线宽被量化的 FinFET 技术中使用多个并行连接）来降低有效电阻。 [4] 然后，对 FinFET 技术的行业标准紧凑模型 (BSIM-CMG) 进行仔细校准，以准确建模和再现所有测量结果。 [5] CMOS 和 FinFET 技术的最新进展允许在单个 FPGA 器件中部署多任务系统级可编程芯片 (SoPC)。 [6] 结果与先前工作的低 LET 粒子辐照结果一致，这些结果表明 SEU 横截面随着 FinFET 技术的电源电压缩放而呈指数级增长。 [7] 鉴于最近证明的密度和射频/毫米波性能之间的出色平衡，FinFET 技术是解决这种具有挑战性的集成的理想候选者 [1]。 [8] 这项工作的目的是指出使用隧道 FET (TFET) 和 FinFET 技术实现的静态随机存取存储器 (SRAM) 单元之间的主要区别。 [9] 汽车电子安全关键应用的增长和 FinFET 技术的主流采用导致 IC 设计可靠性挑战显着增加。 [10] 为了在 finFET 技术中设计具有竞争力的电路，设计人员必须智能地驾驭过多的可靠性规则，例如，通过了解晶体管自热、Irms 电流引起的焦耳热和通过更高的 Iavg 规则之间的权衡温度下，设计人员可以优化满足整体互连可靠性要求所需的设计更改。 [11] 这里的仿真结果证实了 CNTFET 在低功耗领域比 MOS 和 FinFET 技术具有更好的性能。 [12] 使用 32-nm CMOS 和 FinFET 技术研究了所提出的方法。 [13]
Bulk Finfet Technologies 散装 Finfet 技术
The radiation testing shows evidence of interface trap build-up on 14-nm Bulk FinFET technologies. [1] The model is validated in 7 and 14 nm bulk FinFET technologies, and the modeled results show an excellent agreement with the measured data up to 50 GHz ( $\!\sim \!~{f} _{\mathbf {T}} \boldsymbol /4$ ). [2] A single-event-enabled compact model for bulk FinFET technologies has been developed and integrated with a process design kit (PDK) and an industry standard electronic design automation tool flow. [3] In this work, soft error Failure-in- Time (FIT)rates of D-Flip-Flop (D-FF)designs in 16-nm and 7-nm bulk FinFET technologies are characterized with alpha particle irradiations. [4]辐射测试显示了在 14 纳米体 FinFET 技术上形成界面陷阱的证据。 [1] 该模型在 7 和 14 nm 块状 FinFET 技术中得到验证，建模结果显示与高达 50 GHz 的测量数据非常吻合 ($\!\sim \!~{f} _{\mathbf {T}} \粗体符号 /4$ )。 [2] 已开发出一种支持单事件的小型 FinFET 技术模型，并与工艺设计套件 (PDK) 和行业标准电子设计自动化工具流程集成。 [3] 在这项工作中，16-nm 和 7-nm 体 FinFET 技术中的 D-Flip-Flop (D-FF) 设计的软错误及时失效 (FIT) 率通过 α 粒子辐照来表征。 [4]