Esd Behavior
静电放电行为

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10.1109/TED.2019.2913040

Finally, ESD behavior of a-Si:H-based TFTs is discussed.

最后，讨论了基于 a-Si:H 的 TFT 的 ESD 行为。

ESD Reliability Study of a-Si:H Thin-Film Transistor Technology: Physical Insights and Technological Implications

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10.1109/EMCCompo.2019.8919854

According to the principle of equivalent circuit and TCAD(Technology Computer Aided Design) simulation to predict the ESD behavior of the device, and use the transmission line pulse(TLP) for device testing.

根据等效电路原理和TCAD（Technology Computer Aided Design）模拟来预测器件的ESD行为，并利用传输线脉冲（TLP）进行器件测试。

Optimization of LDMOS-SCR Device For ESD Protection Based On 0.5 μm CMOS Process

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10.1109/TED.2019.2926781

Influence of piezoelectric field, carrier trapping, and self-heating on ESD behavior is studied.

研究了压电场、载流子俘获和自热对 ESD 行为的影响。

ESD Reliability of AlGaN/GaN HEMT Technology

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Esd Behavior(静电放电行为)研究综述

Esd Behavior 静电放电行为 - Finally, ESD behavior of a-Si:H-based TFTs is discussed. [1] According to the principle of equivalent circuit and TCAD(Technology Computer Aided Design) simulation to predict the ESD behavior of the device, and use the transmission line pulse(TLP) for device testing. [2] Influence of piezoelectric field, carrier trapping, and self-heating on ESD behavior is studied. [3]
最后，讨论了基于 a-Si:H 的 TFT 的 ESD 行为。 [1] 根据等效电路原理和TCAD（Technology Computer Aided Design）模拟来预测器件的ESD行为，并利用传输线脉冲（TLP）进行器件测试。 [2] 研究了压电场、载流子俘获和自热对 ESD 行为的影响。 [3]