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Mos Device sentence examples within metal oxide semiconductor



MOS based pseudo-resistors exhibiting Tera Ohms of Incremental Resistance for biomedical applications: Analysis and proof of concept



Impact ionization-induced bistability in CMOS transistors at cryogenic temperatures for capacitorless memory applications


Mos Device sentence examples within Si Mos Device



Interface state density and barrier height improvement in ammonium sulfide treated Al2O3/Si interfaces



A study on Improvement of Electrical and Retention characteristics of Non-volatile Memory with Al2O3 Insulator


Mos Device sentence examples within Qubit Mos Device



Characterization and Lambert – W Function based modeling of FDSOI five-gate qubit MOS devices down to cryogenic temperatures



Statistical and Electrical Modeling of FDSOI Four-Gate Qubit MOS Devices at Room Temperature



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Mos Device sentence examples within Nanoscale Mos Device



Novel Al1.997Hf0.003O3 High-k gate dielectric thin films grown by pulsed laser deposition using pre-synthesized target material



Coherent control of a donor-molecule electron spin qubit in silicon


Mos Device sentence examples within Voltage Mos Device



High-Efficiency High Voltage Hybrid Charge Pump Design With an Improved Chip Area



Implementation of a Modified High-Voltage Unity-Gain Buffer


Mos Device sentence examples within mos device technology



Titanium diffusion in Si/Al2O3/Ti/Au metal oxide semiconductor capacitors



Hardware Security Exploiting Post-CMOS Devices: Fundamental Device Characteristics, State-of-the-Art Countermeasures, Challenges and Roadmap


Mos Device sentence examples within mos device performance



FDSOI Sip Epitaxy Optimization for Leakage Reducing



Emerging Tunnel FET and Spintronics based Hardware Secure Circuit Design with Ultra-low Energy Consumption


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10.1109/ICICV50876.2021.9388489

Design an Area Efficient Kogge Stone Adder using Pass Transistor Logic


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10.1109/TNS.2021.3074711

TID Effects Induced by ARACOR, 60Co, and ORIATRON Photon Sources in MOS Devices: Impact of Geometry and Materials


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10.1109/TNS.2021.3053168

Analysis of SEGR in Silicon Planar Gate Super-Junction Power MOSFETs


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10.1007/s11432-020-3197-8

Effects of non-fatal electrostatic discharge on the threshold voltage degradation in nano CMOS devices


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10.1109/TVLSI.2021.3067446

Improving TID Radiation Robustness of a CMOS OxRAM-Based Neuron Circuit by Using Enclosed Layout Transistors


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10.1007/s12633-021-01183-4

Investigation of Variability in Device Design on Saturation Characteristics of Nanowire Tunnel FETs


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10.3390/nano11082118

Characteristic Variabilities of Subnanometer EOT La2O3 Gate Dielectric Film of Nano CMOS Devices


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10.1088/1361-6463/abfd6f

Flexible low-voltage organic thin-film transistors and PMOS inverters: the effect of channel width on noise margin


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10.1109/ISMVL51352.2021.00040

An Optimal Design Methodology of Ternary Logic in Iso-device Ternary CMOS


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10.1007/S10470-021-01856-5

Memristor–CMOS hybrid ultra-low-power high-speed multivibrators


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10.23919/ISPSD50666.2021.9452210

Figure-of-Merit for Laterally Diffused MOSFETs with Rectangular and Semi-Circular Field Oxides


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10.1109/AEEES51875.2021.9403175

Improve the Dynamic Breakdown Voltage of SOI LDMOS Devices by Eliminating the Effect of Deep Depletion in Substrate


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10.1109/ISVLSI51109.2021.00066

Oscillatory Neural Networks for Edge AI Computing


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10.1109/DevIC50843.2021.9455897

A Low Voltage Rectifier for Piezo-Electric Energy Harvesting Designed in CMOS Technology


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10.1109/ISQED51717.2021.9424269

Novel Memristor-based Nonvolatile D Latch and Flip-flop Designs


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10.21203/rs.3.rs-793558/v1

Subthreshold Current Modeling of Stacked Dielectric Triple Material Cylindrical Gate All Around (SD-TM-CGAA) Junctioless MOSFET For Low Power Applications


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10.1109/TED.2021.3075169

Time Evolution of DIBL in Gate-All-Around Nanowire MOSFETs During Hot-Carrier Stress


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10.23919/USNC-URSINRSM51531.2021.9336507

The Science of Electronics in Extreme Electromagnetic Environments I - Enclosure Coupling


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10.1007/s12633-021-01181-6

Comparative Analysis & Study of Various Leakage Reduction Techniques for Short Channel Devices in Junctionless Transistors: A Review and Perspective



Teledyne Princeton Instruments - Teledyne Imaging: Introducing ground-breaking advancements in sensor and camera technology


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10.1142/s0218126621501425

Design of a Bit-Interleaved Low Power 10T SRAM Cell with Enhanced Stability


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10.1109/JSSC.2021.3062092

A Hybrid Single-Inductor Bipolar-Output DC–DC Converter With Floating Negative Output for AMOLED Displays


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10.1007/s12633-021-01432-6

A Comprehensive Analysis of Different SRAM Cell Topologies in 7-nm FinFET Technology



Design-technology co-optimization of sequential and monolithic CFET as enabler of technology node beyond 2nm


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10.1109/ESSCIRC53450.2021.9567834

A Sub-50fs-Jitter Sub-Sampling PLL with a Harmonic-Enhanced 30-GHz-Fundemental Class-C VCO in 0.18µm SiGe BiCMOS


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10.1109/PEMC48073.2021.9432637

Adopting the BSIM3 Model with Thermal Extension for a Si Vertical Power MOSFET


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10.20944/preprints202106.0432.v1

Linearization Technique of Low Power Opamps in CMOS FD-SOI Technologies


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10.1007/978-981-33-6912-2_53

An Integrated VLSI Architecture for Forward and Backward Lifting Scheme Discrete Wavelet Transform Using FinFET Device


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10.1109/TED.2021.3059601

Deep Pipeline Circuit for Low-Power Spintronic Devices


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10.1109/IRPS46558.2021.9405184

CV Stretch-Out Correction after Bias Temperature Stress: Work-Function Dependence of Donor-/Acceptor-Like Traps, Fixed Charges, and Fast States


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10.29103/j-mind.v5i2.3433

PENGARUH GAYA KEPEMIMPINAN TRANSAKSIONAL DAN TRANSFORMASIONAL TERHADAP KINERJA GURU DENGAN KEPUASAN KERJA SEBAGAI VARIABEL INTERVENING PADA SMK NEGERI DI ACEH UTARA


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10.3390/PROCEEDINGS2020056043

Optimization of SnO2-Based CMOS-Integrated Gas Sensors by Mono-, Bi- and Trimetallic Nanoparticles


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10.1109/LAEDC51812.2021.9437935

Analysis of the ZTC-Point for Vertically Stacked Nanosheet pMOS Devices


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10.1109/TED.2021.3067587

Capacitance–Voltage Technique Based on Time Varying Magnetic Field for VDMOSFET—Part I: Concept and Implementation


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10.1088/1742-6596/2032/1/012111

Designing elements of MOS circuits resistant to destabilizing factors


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10.1016/J.PHYSB.2021.413204

Dielectric and electrical performance of poly (o-toluidine) based MOS devices



Gate spacers etching of Si3N4 using cyclic approach for 3D CMOS devices


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10.1109/TED.2020.3044554

Assessing Negative-Capacitance Drain-Extended Technology for High-Voltage Switching and Analog Applications


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10.1186/s12870-021-03100-8

An illuminated respiratory activity monitoring system identifies priming-active compounds in plant seedlings



Selective area grown AlInGaN nanowire arrays with core-shell structures for photovoltaics on silicon.


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10.1109/EDTM50988.2021.9420919

Hot-Carrier-Induced Reliability Concerns for Lateral DMOS Transistors with Split-STI Structures


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10.1088/1755-1315/742/1/012014

Radiation Response of AI2O3 based Metal-Oxide-Semiconductor Structures under Gamma-ray


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10.1109/CSTIC52283.2021.9461476

Effects of Different Gate Stress Conditions on Hot Carrier Injection in High Voltage N-Channel CMOS


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10.1109/CONIT51480.2021.9498453

Effect of using High-k Dielectric Material on Transconductance of a Strained-Si PMOS



Impact of threshold assessment methods in laser-induced damage measurements using the examples of CCD, CMOS, and DMD.


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