Transient Photoconductivity
과도 광전도성

Sentence Examples

Discover more insights into Transient Photoconductivity 과도 광전도성

Keywords frequently search together with Transient Photoconductivity 과도 광전도성

Narrow sentence examples with built-in keyword filters

More Transient Photoconductivity 과도 광전도성 sentence examples
10.1016/J.MSSP.2019.04.027

Thus the initial and the modified TiO2 nanoparticles were characterized using the XPS technique and their transient photoconductivity was measured.

따라서 초기 및 수정된 TiO2 나노입자는 XPS 기술을 사용하여 특성화되었고 일시적인 광전도도가 측정되었습니다.

Photoconductivity studies on surface modified TiO2 nanoparticles

More Transient Photoconductivity 과도 광전도성 sentence examples
10.1080/14786435.2018.1532120

The method is based on the analysis of transient photoconductivity (TPC) data using Laplace transform technique.

이 방법은 라플라스 변환 기술을 사용한 과도 광전도도(TPC) 데이터 분석을 기반으로 합니다.

A new approach for determination of free carriers lifetime and density of localised states in disordered semiconductors

More Transient Photoconductivity 과도 광전도성 sentence examples
10.1002/smll.201905916

Circularly polarized light sensitivity in transient photoconductivity is confirmed apparently in the carbon-based helical structures.

과도 광전도성에서 원형 편광 감도는 탄소 기반 나선 구조에서 분명히 확인됩니다.

Helical Pore Alignment on Cylindrical Carbon.

More Transient Photoconductivity 과도 광전도성 sentence examples
10.1080/01411594.2019.1644637

steady state photoconductivity, dark conductivity , dark activation energy , transient photoconductivity on vacuum evaporated thin films of Ge20Te80-xSbx (x = 0, 2, 4, 6, 10 at.

정상 상태 광전도도, 암 전도도, 암 활성화 에너지, Ge20Te80-xSbx(x = 0, 2, 4, 6, 10 at.

Temperature-dependent photoconductive properties of Ge-Sb-Te thin films

Learn more from Transient Photoconductivity 과도 광전도성

Keywords related to Transient

Transient Photoconductivity 과도 광전도성

Transient Photoconductivity 과도 광전도성
Encyclopedia 백과사전

Transient Photoconductivity(과도 광전도성)란 무엇입니까?

Transient Photoconductivity 과도 광전도성 - Thus the initial and the modified TiO2 nanoparticles were characterized using the XPS technique and their transient photoconductivity was measured. [1] The method is based on the analysis of transient photoconductivity (TPC) data using Laplace transform technique. [2] Circularly polarized light sensitivity in transient photoconductivity is confirmed apparently in the carbon-based helical structures. [3] steady state photoconductivity, dark conductivity , dark activation energy , transient photoconductivity on vacuum evaporated thin films of Ge20Te80-xSbx (x = 0, 2, 4, 6, 10 at. [4]
따라서 초기 및 수정된 TiO2 나노입자는 XPS 기술을 사용하여 특성화되었고 일시적인 광전도도가 측정되었습니다. [1] 이 방법은 라플라스 변환 기술을 사용한 과도 광전도도(TPC) 데이터 분석을 기반으로 합니다. [2] 과도 광전도성에서 원형 편광 감도는 탄소 기반 나선 구조에서 분명히 확인됩니다. [3] 정상 상태 광전도도, 암 전도도, 암 활성화 에너지, Ge20Te80-xSbx(x = 0, 2, 4, 6, 10 at. [4]