In2o3 Films(인투3 필름)란 무엇입니까?
In2o3 Films 인투3 필름 - Herein, magnetron sputtering is used for generating oxygen vacancies in In2O3 films with the help of high-energy plasma treatment. [1] Further, ethanol sensing performance of the N–In2O3 films have been found to depend strongly on their microstructure. [2] We considered the effect of coverage of the surface of In2O3 films with rhodium on the sensitivity of their electrophysical properties to ozone (1 ppm). [3] The effect of surface modification of In2O3 films by rhodium atoms deposited by electron beam sputtering on the XP spectra is considered. [4] The EDX spectrum reveals the presence of In and O element necessary for In2O3 films for film formation. [5] In2O3 films were deposited on c-plane sapphire substrates by using pulsed laser deposition (PLD) without and with oxygen plasma at various growth temperature. [6] The In2O3 films with high crystalline quality as well as satisfactory photoelectrical characteristics can be extensively used in the manufacture of various semiconductor devices. [7] For the WO and WpO processes, the In2O3 films are considered to be formed by quite different mechanisms, due to oxidation or lack thereof in the presence or absence of the -O-In-OH* intermediate product. [8] The In2O3 films are analyzed by ultraviolet/visible spectroscopy, atomic force microscopy, grazing incidence X-ray diffraction, and Hall-effect measurement. [9] The electron mobilities of In2O3 films are investigated by the thin film transistors (TFTs) under annealing at different temperatures. [10] For electronic device applications, most In2O3 films were grown on glass at low temperature with polycrystalline and/or amorphous crystalline structures. [11] The substrates prepared in such a way are used in the course of the epitaxy of Fe2O3 and In2O3 films. [12]nan [1] nan [2] nan [3] nan [4] nan [5] nan [6] 높은 결정질과 만족스러운 광전 특성을 갖는 In2O3 막은 다양한 반도체 소자의 제조에 광범위하게 사용될 수 있다. [7] WO 및 WpO 공정의 경우, In2O3 막은 -O-In-OH* 중간 생성물의 존재 또는 부재 하에 산화 또는 결핍으로 인해 상당히 다른 메커니즘에 의해 형성되는 것으로 간주됩니다. [8] In2O3 필름은 자외선/가시광선 분광법, 원자력 현미경, 스침 입사 X선 회절 및 홀 효과 측정으로 분석됩니다. [9] In2O3 필름의 전자 이동도는 다양한 온도에서 어닐링된 박막 트랜지스터(TFT)에 의해 조사됩니다. [10] 전자 장치 응용 분야의 경우 대부분의 In2O3 필름은 다결정 및/또는 비정질 결정 구조를 사용하여 저온에서 유리에서 성장되었습니다. [11] 이렇게 준비된 기판은 Fe2O3 및 In2O3 박막의 에피택시 과정에서 사용된다. [12]
Doped In2o3 Films 도핑된 In2o3 필름
Excimer laser irradiation (ELI) has recently been revealed to simultaneously increase the work function (ϕ) and carrier concentration (N) in doped In2O3 films, suggesting a potential benefit in fabricating transparent conducting oxides (TCOs) for organic light emitting diodes (OLEDs). [1] NH3 gas sensing studies was also carried out at room temperature for both pure and Cr doped In2O3 films, and the obtained higher sensitivity is 182% for Cr doped In2O3, which is about nine times higher than for the pure In2O3 film due to the presence of defects on the doped film surface. [2] To investigate the origin of this apparent violation, the magnetoconductivity was measured at temperatures T = 15 – 150 K in ten, Sn-doped In2O3 films with d = 13 – 292 nm, grown by pulsed laser deposition on fused silica. [3] This work has significance on the size-dependent properties and the chemical bonding in Fe doped In2O3 films. [4]nan [1] nan [2] nan [3] 이 연구는 크기 의존적 특성과 Fe 도핑된 In2O3 필름의 화학적 결합에 대해 의미가 있습니다. [4]
Amorphou In2o3 Films
The incorporation of Ga element into amorphous In2O3 films obviously increases the activation energy of nucleation and migration. [1] However, dopants have a general tendency to increase the complexity and decrease the mobility of semiconductors and their addition might well be avoided if high-quality, amorphous In2O3 films could be grown without them. [2]nan [1] 그러나 도펀트는 반도체의 복잡성을 증가시키고 이동성을 감소시키는 일반적인 경향을 가지며 고품질의 비정질 In2O3 필름이 없이 성장될 수 있다면 첨가를 피할 수 있습니다. [2]