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Understanding High-Energy 75-MeV Sulfur-Ion Irradiation-Induced Degradation in GaN-Based Heterostructures: The Role of the GaN Channel Layer


Scandium-Based Ohmic Contacts to InAlN/GaN Heterostructures on Silicon

Hemt Structure sentence examples within Proposed Hemt Structure



T-gate ALGaN/GaN HEMT with effective recess engineering for enhancement mode operation


Investigation of Quaternary Barrier InAlGaN/GaN/AlGaN Double-Heterojunction High-Electron-Mobility Transistors (HEMTs) for High-Speed and High-Power Applications

Hemt Structure sentence examples within Polar Hemt Structure



HfO2 as gate insulator on N-polar GaN–AlGaN heterostructures


Electron transport in N-polar GaN-based heterostructures


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Improved Channel Electron Mobility Through Electric Field Reduction in GaN Quantum-Well Double-Heterostructures



Анализ влияния спейсерных слоев на нелинейные искажения вольт-амперных характеристик pHEMT на основе соединения GaAlAs/InGaAs



A Novel Approach for Room-Temperature Intersubband Transition in GaN HEMT for Terahertz Applications



A Poisson–Schrodinger and cellular automaton coupled approach for two-dimensional electron gas transport modeling of GaN-based high mobility electron transistors



Transport properties of AlGaN/GaN HEMT structures with back barrier: impact of dislocation density and improved design



Analysis of AlGaN/GaN HEMT and Its Operational Improvement Using a Grated Gate Field Plate



The Radiation Hardness of Quantum Dot Embedded in High Electron Mobility Transistor Force-Sensitive Structure


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10.1109/DevIC50843.2021.9455887

The Performance Analysis of 70nm T-gate InAlN/AlN MOS-HEMT using Graded Buffer



Suppressing Buffer-Induced Current Collapse in GaN HEMTs with a Source-Connected p-GaN (SCPG): A Simulation Study



Local trap spectroscopy on cross-sectioned AlGaN/GaN devices with in situ biasing



Optical characterization of InAlN/AlN/InGaN/GaN/sapphire high electron mobility transistor structures



An AlGaN/GaN HEMT by the periodic pits in the buffer layer



Electron-spin-resonance studies of AlGaN/GaN MIS-HEMT structures with Al2O3 fabricated by atomic layer deposition



Design and analysis of 10 nm T-gate enhancement-mode MOS-HEMT for high power microwave applications



Properties of the Two-Dimensional Electron-Gas of a Hybrid MgZnO/InGaN/ZnO Heterostructure with an InGaN Channel Layer



Investigation of Structural, Optical and Electrical Properties of Al0.3Ga0.7N/GaN HEMT Grown by MOCVD



Growth behavior of GaN on AlN for fully coalesced channel of AlN-based HEMT


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Hemt Structure 헴트 구조


Hemt Structure 헴트 구조
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