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Two inch GaN substrates fabricated by the near equilibrium ammonothermal (NEAT) method


GaN Substrate development through the near equilibrium ammonothermal (NEAT) method and its application to higher performance GaN-based devices

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71Ga NMR characterization of an n-doped free-standing gallium nitride wafer


Vertical GaN-on-GaN PIN diodes fabricated on free-standing GaN wafer using an ammonothermal method

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Growth of a High Quality GaN Wafer from Point Seeds by the Na-Flux Method


Connection between Carbon Incorporation and Growth Rate for GaN Epitaxial Layers Prepared by OMVPE


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10.1109/SSLChinaIFWS49075.2019.9019762

Application of In-situ Pre-epi Clean Process for Next Generation Semiconductor Devices



Development of a 2-inch GaN wafer by using the oxide vapor phase epitaxy method



Asymmetric Double-Gate β-Ga 2 O 3 Nanomembrane Field-Effect Transistor for Energy-Efficient Power Devices



GaN Substrates of the Highest Structural Quality



Selective Area Deposition of Hot Filament CVD Diamond on 100 mm MOCVD Grown AlGaN/GaN Wafers


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10.1016/J.PRECISIONENG.2018.08.002

Photochemically combined mechanical polishing of N-type gallium nitride wafer in high efficiency


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10.1088/1674-4926/40/1/012806

Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH 3 plasma pretreatment



Photoelectrochemically combined mechanical polishing of n-type gallium nitride wafer by using metal nanoparticles as photocathodes



Transfer-Free Graphene-Like Thin Films on GaN LED Epiwafers Grown by PECVD Using an Ultrathin Pt Catalyst for Transparent Electrode Applications


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Gan Wafer 간 웨이퍼


Gan Wafer 간 웨이퍼
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