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10.1109/DevIC50843.2021.9455911

Investigation of Work Function Variation on the Electrical Performance of sub-7nm GAA FETs



A Novel Teeth Junction Less Gate All Around FET for Improving Electrical Characteristics



Ge/Si Multilayer Epitaxy and Removal of Dislocations from Ge-nanosheet-channel MOSFETs



The GAAFETs with Five Stacked Ge Nano-sheets Made by 2D Ge/Si Multilayer Epitaxy, Excellent Selective Etching, and Conformal Monolayer Doping


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