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10.23919/VLSIT.2019.8776539

We also performed simulation studies to show the promise of the GeSnOI platform, which is not only able to suppress the off-state leakage current and improve the $I_{on}/I_{off}$ ratio of tunneling FETs, but can also provide the powerful flexibility of using a back bias to achieve superior electrical characteristics beyond the benefits of incorporating Sn into Ge.

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10.1109/SPIN.2019.8711728

This heterostructure device of tunneling FETs improves the drive current to.

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10.1002/smll.201803852

In recent past, for next-generation device opportunities such as sub-10 nm channel field-effect transistors (FETs), tunneling FETs, and high-end display backplanes, tremendous research on multilayered molybdenum disulfide (MoS2 ) among transition metal dichalcogenides has been actively performed.

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10.1109/JXCDC.2019.2960307

Specifically, more than $10\times $ improvement in energy-delay product (EDP) is demonstrated for the systems using spin diffusion-based devices and tunneling FETs compared to their conventional CMOS counterparts.

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10.1109/CSTIC.2019.8755771

This paper investigates the influence of source doping effects (SDEs) on the tunneling probability TE(E) and on-state currents in homojunction and heterojunction tunneling FETs (TFETs).

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10.1109/S3S46989.2019.9320690

We have proposed and demonstrated a novel bi-layer tunneling FETs (TFETs) composed of group IV semiconductor (Si, SiGe, Ge)/oxide semiconductor type-II hetero-junctions, where the group IV and oxide semiconductors work as source and channels, respectively, of TFETs.

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Keywords related to Tunneling

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Keywords related to Fets

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Tunneling Fets

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Mar 20, 2023

What is/are Tunneling Fets?

Tunneling Fets - We also performed simulation studies to show the promise of the GeSnOI platform, which is not only able to suppress the off-state leakage current and improve the $I_{on}/I_{off}$ ratio of tunneling FETs, but can also provide the powerful flexibility of using a back bias to achieve superior electrical characteristics beyond the benefits of incorporating Sn into Ge. ^[1] This heterostructure device of tunneling FETs improves the drive current to. ^[2] In recent past, for next-generation device opportunities such as sub-10 nm channel field-effect transistors (FETs), tunneling FETs, and high-end display backplanes, tremendous research on multilayered molybdenum disulfide (MoS2 ) among transition metal dichalcogenides has been actively performed. ^[3] Specifically, more than $10\times $ improvement in energy-delay product (EDP) is demonstrated for the systems using spin diffusion-based devices and tunneling FETs compared to their conventional CMOS counterparts. ^[4] This paper investigates the influence of source doping effects (SDEs) on the tunneling probability TE(E) and on-state currents in homojunction and heterojunction tunneling FETs (TFETs). ^[5] We have proposed and demonstrated a novel bi-layer tunneling FETs (TFETs) composed of group IV semiconductor (Si, SiGe, Ge)/oxide semiconductor type-II hetero-junctions, where the group IV and oxide semiconductors work as source and channels, respectively, of TFETs. ^[6]