Introduction to Pbtio3 Thin

What is/are Pbtio3 Thin?

Pbtio3 Thin - In accordance with the domain wall speed driven by an applied electric field, the PbTiO3 nanorod exhibited fast domain switching behavior compared to the PbTiO3 thin film. ^[1] We present a detailed analysis of the temperature dependence of the thermal conductivity of a ferroelectric PbTiO3 thin film deposited in a composition-spread geometry enabling a continuous range of compositions from ∼25% titanium deficient to ∼20% titanium rich to be studied. ^[2] This paper reports the thermal conductivity of single-crystal PbTiO3 thin films over a wide variety of epitaxial-strain-engineered ferroelectric domain configurations. ^[3] We investigate the leakage current induced by oxygen vacancies in PbTiO3 films, and the doped PbTiO3 thin FE films having oxygen vacancies. ^[4] Here, the authors report on non-local mechanical force induced switching in PbTiO3 thin films by tuning the material to a state of nearly energetically degenerate co-existing domains. ^[5] We report the successful growth of multiferroic (Nd,Fe)-doped PbTiO3 thin films with the composition (Pb0. ^[6] 85PbTiO3 thin films are deposited on SRO/Pt/MgO substrates by RF-magnetron sputtering method. ^[7] Here, a series of PbTiO3 thin films under various cooling rates were deposited on (110)-oriented NdScO3 substrates by pulsed laser deposition and investigated by using conventional transmission electron microscopy, Cs-corrected scanning TEM and piezoresponse force microscopy. ^[8] 8O3 and PbTiO3 thin films is typically about one-unit cell, across which the oxygen octahedron distortion behavior is in excellent agreement with first principles calculations. ^[9] Here, using in situ and aberration-corrected transmission electron microscopy, we directly observe reversible switching of individual 90° domains in dislocation-free PbTiO3 thin films and uncover the weakened interface clamping effect. ^[10]

Doped Pbtio3 Thin

We investigate the leakage current induced by oxygen vacancies in PbTiO3 films, and the doped PbTiO3 thin FE films having oxygen vacancies. ^[1] We report the successful growth of multiferroic (Nd,Fe)-doped PbTiO3 thin films with the composition (Pb0. ^[2]

pbtio3 thin film

In accordance with the domain wall speed driven by an applied electric field, the PbTiO3 nanorod exhibited fast domain switching behavior compared to the PbTiO3 thin film. ^[1] We present a detailed analysis of the temperature dependence of the thermal conductivity of a ferroelectric PbTiO3 thin film deposited in a composition-spread geometry enabling a continuous range of compositions from ∼25% titanium deficient to ∼20% titanium rich to be studied. ^[2] This paper reports the thermal conductivity of single-crystal PbTiO3 thin films over a wide variety of epitaxial-strain-engineered ferroelectric domain configurations. ^[3] Here, the authors report on non-local mechanical force induced switching in PbTiO3 thin films by tuning the material to a state of nearly energetically degenerate co-existing domains. ^[4] We report the successful growth of multiferroic (Nd,Fe)-doped PbTiO3 thin films with the composition (Pb0. ^[5] 85PbTiO3 thin films are deposited on SRO/Pt/MgO substrates by RF-magnetron sputtering method. ^[6] Here, a series of PbTiO3 thin films under various cooling rates were deposited on (110)-oriented NdScO3 substrates by pulsed laser deposition and investigated by using conventional transmission electron microscopy, Cs-corrected scanning TEM and piezoresponse force microscopy. ^[7] 8O3 and PbTiO3 thin films is typically about one-unit cell, across which the oxygen octahedron distortion behavior is in excellent agreement with first principles calculations. ^[8] Here, using in situ and aberration-corrected transmission electron microscopy, we directly observe reversible switching of individual 90° domains in dislocation-free PbTiO3 thin films and uncover the weakened interface clamping effect. ^[9]