Introduction to Nanowire Fets

What is/are Nanowire Fets?

Nanowire Fets - Normally, for these sensors’ higher sensitivities will be obtained as these biosensors structure consists of nanowire FETs. ^[1] In this work, an analytical surface potential model for gate-all-around BCE-assisted silicon nanowire FETs, with arbitrary and possibly distinct spacer and gate oxides, is derived. ^[2] Two different types of GaN-based nanostructure FETs, such as FinFETs and gate-all-around (GAA) nanowire FETs, have been investigated along with discussing their important performances for a possible new application. ^[3] Through the effective modulation of the hysteretic window by irradiating the nanowire FETs with a UV laser, we believe many unique applications involving the optical modulation and photodetection that are commonly found in silicon photonics can be realized. ^[4] To this end, dual-gate silicon-nanowire FETs are fabricated based on anisotropic wet etching of silicon and nickel silicidation yielding silicide-nanowire Schottky junctions at source and drain. ^[5] The primary goal of the junctionless nanowire FET is to eliminate the struggle of making junctions and doping in short channel nanowire FETs. ^[6] Negative bias temperature instability is an important reliability issue for FinFET and gate-all-around nanowire FETs at next-generation technology nodes which leads to circuit failure during the life time of the device. ^[7] Therefore, we have extracted a SPICE based compact model for nanowire FETs from the measured data. ^[8] This approach utilizes the unintentionally doped GaN template layer which is common to LED growth for the fabrication of nanowire FETs. ^[9] In this paper, we developed an analytical model for the $I{-}V$ characteristics of junctionless nanowire FETs (JLNWFETs) in which the radius of the nanowire is large enough to allow quantum confinement effects to be neglected. ^[10] In this paper, full 3-D device simulations are performed to study the effect of random discrete dopants (RDD) and metal gate granularity (MGG) on the performance of a 10nm channel length vertically stacked silicon nanowire FETs. ^[11] This study compares the impact of screening effects in single gate, double gate and gate all-around nanowire FETs with nanosheet FETs based on experimental data and calibrated TCAD simulation results. ^[12] This framework is also suitable for path-finding researches on 5nm node gate-all-around devices, like nanowire FETs, nanosheet FETs and beyond. ^[13] In this paper, we develop an accurate compact model for work-function variation (WFV)-induced threshold voltage $({V}_{\textsf {th}})$ variations of various 5-nm candidates, in this case, Si SOI FinFETs, vertical gate-all-around nanowire FETs, and nanoplate FETs. ^[14] Here, we investigate that limit by simulating gate-all-around Si nanowire FETs with gate lengths between 8 and 3 nm using the state-of-the-art atomistic quantum transport modeling. ^[15] This paper demonstrate the comparative study of various linearity as well as intermodulation distortion (IMD) parameters for junctionless (JL) and charge plasma (CP) dopingless nanowire FETs with dual material gate (DM). ^[16] We demonstrate that the method is of general applicability, in fact, we show results for planar, ultrathin-body FETs and also for three-dimensional, nanowire FETs, and we deal with different crystal orientations and account for possible stress/strain conditions in the simulated systems. ^[17] In this paper, SHEs in a triplestacked nanowire FETs (NWFETs) with trenched source drain structures, a structure which may be capable of obtaining a high on-current (Ion) in the 5 nm node, were analyzed through TCAD simulations. ^[18] The carrier transport behavior in such partially embedded nanowire FETs has been modeled by incorporating the relevant stress-related effects into the indigenously developed self-consistent quantum-electrostatic framework. ^[19] In the present work, a comprehensive study of temperature on gate-all-around silicon nanowire FETs (GAA-SNWTs) with source/drain underlap is performed to investigate the influence of Air as spacer dielectric, on analog/RF behavior of the device. ^[20] 4 is achieved, which is today’s record value among the sub-100-nm- ${L}_{g}$ n-channel Ge Fin and gate-all-around nanowire FETs. ^[21]

Around Nanowire Fets

Negative bias temperature instability is an important reliability issue for FinFET and gate-all-around nanowire FETs at next-generation technology nodes which leads to circuit failure during the life time of the device. ^[1] This study compares the impact of screening effects in single gate, double gate and gate all-around nanowire FETs with nanosheet FETs based on experimental data and calibrated TCAD simulation results. ^[2] In this paper, we develop an accurate compact model for work-function variation (WFV)-induced threshold voltage $({V}_{\textsf {th}})$ variations of various 5-nm candidates, in this case, Si SOI FinFETs, vertical gate-all-around nanowire FETs, and nanoplate FETs. ^[3] 4 is achieved, which is today’s record value among the sub-100-nm- ${L}_{g}$ n-channel Ge Fin and gate-all-around nanowire FETs. ^[4]

Silicon Nanowire Fets

In this work, an analytical surface potential model for gate-all-around BCE-assisted silicon nanowire FETs, with arbitrary and possibly distinct spacer and gate oxides, is derived. ^[1] In this paper, full 3-D device simulations are performed to study the effect of random discrete dopants (RDD) and metal gate granularity (MGG) on the performance of a 10nm channel length vertically stacked silicon nanowire FETs. ^[2] In the present work, a comprehensive study of temperature on gate-all-around silicon nanowire FETs (GAA-SNWTs) with source/drain underlap is performed to investigate the influence of Air as spacer dielectric, on analog/RF behavior of the device. ^[3]