Introduction to Mos2 Fets

What is/are Mos2 Fets?

Mos2 Fets - These results indicate that CF4/O2-plasma treatment is an effective way for improving the bulk and interface qualities of gate dielectrics and thus the electrical properties of MoS2 FETs. ^[1] In this study we identify the possible sources of FLP in MoS2 FETs and resolve them individually. ^[2] The experimental results show that MoS2 FETs fabricated on different-concentration Si substrates using the same processing have similar interface characteristics and surface roughness of gate dielectric but exhibit different carrier mobility, and the higher the doping concentration, the higher the carrier mobility. ^[3] A 62-level SPICE modeling was implemented for MoS2 FETs and further used to construct functional digital, analog, and photodetection circuits. ^[4] Obtained results prove the potential of paper-based MoS2 FETs as building blocks of next-generation integrated circuits for a wide range of practical applications. ^[5] The MoS2 FETs can be grouped into either high- or low-mobility devices according to their temperature behaviors of mobilities. ^[6] A 62-level SPICE modeling was implemented for MoS2 FETs and further used to construct functional digital, analog, and photodetection circuits. ^[7]

field effect mobility

Our findings on the hysteresis-free transfer characteristic and high intrinsic field-effect mobility in salt-assisted monolayer MoS2 FETs will be beneficial for future device applications in complex memory, logic, and sensor systems. ^[1]

Monolayer Mos2 Fets

Our end-bond contact strategy in monolayer MoS2 FETs enables the great potential for atomically thin integrated circuitry. ^[1] Our findings on the hysteresis-free transfer characteristic and high intrinsic field-effect mobility in salt-assisted monolayer MoS2 FETs will be beneficial for future device applications in complex memory, logic, and sensor systems. ^[2] Here, we proposed a model to quantitatively retrieve the density of defect states from the hysteretic gate transfer characteristics of field effect transistors (FETs), and applied it to monolayer MoS2 FETs before and after superacid treatment. ^[3] This study establishes the critical role of substrate coupling on the performance and variability of monolayer MoS2 FETs. ^[4] We study and compare the performance of monolayer MoS2 FETs on different substrates, viz. ^[5]

2d Mos2 Fets

Here, we experimentally study 2D MoS2-based NC-FETs using MoS2 with CMOS-compatible hafnium zirconium oxide (HfZrO2 or HZO) as the ferroelectric (FE) and demonstrate remarkable short-channel behavior compared to similar 2D MoS2 FETs. ^[1] These interfacial structures between MoS2 and contact metals strongly correlated with the electrical performance of 2D MoS2 FETs, providing practical guidelines to form van der Waals contacts. ^[2]