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Moo3 Thin sentence examples within Doped Moo3 Thin
Sn doped MoO3 thin film was prepared via combining the solid-state reaction between Sn2+ and MoO3 with thermal deposition technology.
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Undoped and W-doped MoO3 thin films were prepared onto the glass and fluorine doped tin oxide coated glass substrates by the spray pyrolytic decomposition of molybdenum (V) chloride (MoCl5) precursor solution.
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Moo3 Thin sentence examples within Evaporated Moo3 Thin
In this investigation, we have measured the optical constants (n, k) of vacuum evaporated MoO3 thin films and of ZxMoO3 (Z = H+, Li+) bronze thin films being annealed at different temperatures and with different concentrations (x) over the range 298–453 K without and within an oxygen plasma environment using manual ellipsometry.
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Thermo optical properties are reported for thermally evaporated MoO3 thin films using ellipsometry.
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Moo3 Thin sentence examples within moo3 thin film
SEM micrograph was used to identify the nano tubes in MoO3 thin film and UV-visible spectroscopy exhibits the maximum absorption in ultra-violet region and band gap decrease (3.
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Characteristic peaks from x-ray diffraction patterns indicated a well crystalline orthorhombic structure of MoO3 thin film.
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SEM micrograph was used to identify the nano tubes in MoO3 thin film and UV-visible spectroscopy exhibits the maximum absorption in ultra-violet region and band gap decrease (3.
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Characteristic peaks from x-ray diffraction patterns indicated a well crystalline orthorhombic structure of MoO3 thin film.
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Herein, the thermal conductivities across the van der Waals layers of α-MoO3 thin films with nominal thicknesses of 50, 100, and 125 nm were investigated.
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The role of the sputtering power, film thickness, and sputtering working pressure on the adsorption capacity and photocatalytic activity of MoO3 thin films was studied.
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MoO3 thin film was deposited both on soda–lime silicate glass as a thin film and n-type and (100) oriented GaAs substrates using RF magnetron sputtering method at substrate temperatures of room temperature, 100 °C, 200 °C and 300 °C.
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The electrochemical properties of the α-MoO3 thin film electrode supercapacitors were performed using cyclic voltammetry and galvanostatic charge/discharge curves recorded at different scan rates and applied current densities.
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The MoO3 thin films deposited on p-type silicon substrates with thermally grown 300 nm thick SiO2 layer with different numbers of ALD growth cycles.
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The MoS2 thin films were formed on the surface of Si NPs by sulfurizing the MoO3 thin films coated on the Si NP arrays.
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In this work, MoO3 thin films were irradiated with a 325-nm UV laser.
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In this study, the MoO3 thin films prepared by electron beam (EB) evaporation were used as the back contact layer in an Sb2Se3 thin-film solar cell to compensate for the low intrinsic doping density (insufficient carrier collection) of Sb2Se3 as well as to optimize the back contact issues of Sb2Se3 thin-film solar cell.
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The present work proposes a method of downscaling the thermal diffusivity (α ) of MoO3 thin films through annealing temperature-induced nano-lamelle formation.
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Sn doped MoO3 thin film was prepared via combining the solid-state reaction between Sn2+ and MoO3 with thermal deposition technology.
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With a comparative investigation was reported that an OSC structure with HTL of MoO3 thin film providing optimal device performance in the present study might be preferred as an alternatively effective material for opto-electronic applications.
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Modifications in optical properties due to the doping of Cobalt in MoO3 thin films are studied in terms of transmittance data and Taucs plot.
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We have studied the PLD-grown nanostructured MoO3 thin film for its photochromic performance.
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Structural, optical and electrical properties of Al+MoO3 and Au+MoO3 thin films prepared by simultaneous magnetron sputtering deposition were investigated.
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Results of the application of SPS to the characterization of MoO3 thin films and semiconductor laser structures are presented to validate the performance of the setup, highlighting the effectiveness of SPS for the characterization of semiconductor materials and devices.
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Undoped and W-doped MoO3 thin films were prepared onto the glass and fluorine doped tin oxide coated glass substrates by the spray pyrolytic decomposition of molybdenum (V) chloride (MoCl5) precursor solution.
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We have measured mass densities, thermo-optic coefficients, and electronic polarizability of MoO3 thin films and of HxMoO3 and LixMoO3 bronze thin films over the temperature range from 100 K to 373 K using ellipsometry.
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The proposed sensing probe utilizes nanostructured α-MoO3 thin film as the sensing material in which free carriers and plasmonic properties are induced in response to hydrogen exposure.
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In the present report, a simple and cost-effective spray pyrolysis technique (SPT) has been used to synthesize h-MoO3 thin films from ammonium heptamolybdate tetrahydrate as a precursor material.
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The second part treats several techniques for studying the etching time effect on the structural, electrical, optical properties of the 5%Zn doped MoO3 thin film.
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X-ray diffraction (XRD) pattern revealed the monoclinic crystalline phases of Ba–MoO3 thin films along with improved grain size.
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The feasibility of growing atomically thin MoS2 films (down to two monolayers) on several tens of cm2 area was demonstrated by first depositing the MoO3 thin film by using an atomic layer depositio.
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The result of XRD analysis was further confirmed by Raman spectroscopy which showed the formation of α-MoO3 thin films with the most intense peak at 818 cm−1.
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In this investigation, we have measured the optical constants (n, k) of vacuum evaporated MoO3 thin films and of ZxMoO3 (Z = H+, Li+) bronze thin films being annealed at different temperatures and with different concentrations (x) over the range 298–453 K without and within an oxygen plasma environment using manual ellipsometry.
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In this study, we report synthesis of few layers MoS2 films by vapour-phase sulphurization of Mo/MoO3 thin films grown using electron beam (e− bean) evaporation technique.
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Graphical abstract The MoO3 and TiO2-MoO3 thin films were deposited by d.
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In this work, the morphological, compositional, structural, optical and dielectric properties of CdSe which are deposited onto glass and onto MoO3 thin film substrates are investigated.
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The chemical and electronic structure of MoO3 thin films is monitored by synchrotron-based hard X-ray photoelectron spectroscopy while annealing from room temperature to 310 °C.
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Structural changes of MoO3 thin films deposited on thick copper substrates upon annealing at different temperatures were investigated via ex situ X-Ray Absorption Spectroscopy (XAS).
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MoO3 thin films were synthesized via thermal annealing of thin, metallic Mo films deposited onto the FTO substrate using a magnetron sputtering system.
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Molybdenum oxide (MoO3) and Fe,Co-codoped MoO3 thin films obtained by spray pyrolysis have been in-depth investigated to understand the effect of Co and Fe codoping on MoO3 thin films.
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Namely, MoO3 thin films that are nanosandwiched with Li sheets of thicknesses larger than 50 nm, exhibit structural phase transitions from hexagonal to monoclinic and reveals larger crystallite sizes.
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Thermo optical properties are reported for thermally evaporated MoO3 thin films using ellipsometry.
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Here we report that spray deposition of MoO3 thin films yielded a combination of three phases: monoclinic, hexagonal and orthorhombic at low temperatures and a pure orthorhombic phase (α-MoO3) is obtained at 425°C is confirmed from the XRD measurements.
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Interestingly, in CVD, it is possible to grow MoS2 layer using MoO3 thin film instead of powder.
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Charge-discharge measurements demonstrated that the α-MoO3 thin layer could enhance the electrochemical performances.
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