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Effect of illumination on positron states in wide bandgap semiconductors



Vacancy-type defects in GaN-based power device structure - defect characterization in ion implanted GaN and Al2O3/GaN -


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10.1088/1748-0221/16/08/P08001

A new system for real-time data acquisition and pulse parameterization for digital positron annihilation lifetime spectrometers with high repetition rates



Effect of illumination on positron states in wide bandgap semiconductors


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10.1109/ICIPRM.2019.8819019

Vacancy-type defects in GaN-based power device structure - defect characterization in ion implanted GaN and Al2O3/GaN -



Effect of Zn for Ni substitution on the properties of Nickel-Zinc ferrites as studied by low-energy implanted positrons


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