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Hydrogen Dilution sentence examples within chemical vapor deposition

chemical vapor deposition

In this paper, the correlation of impedance matching and optical emission spectroscopy during plasma-enhanced chemical vapor deposition (PECVD) was systematically investigated in SiH4 plasma diluted by various hydrogen dilution ratios.

Correlation of Impedance Matching and Optical Emission Spectroscopy during Plasma-Enhanced Chemical Vapor Deposition of Nanocrystalline Silicon Thin Films

chemical vapor deposition

GeSi:H films are prepared by hot-wire chemical vapor deposition (CVD) with high hydrogen dilution, DH=98%.

Effects of Hot Wire Temperature on Properties of GeSi:H Films with High Hydrogen Dilution by Hot-Wire Chemical Vapor Deposition

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Hydrogen Dilution sentence examples within High Hydrogen Dilution

High Hydrogen Dilution

83 eV) were prepared at 100 °C using a high hydrogen dilution ratio.

High-Performance Amorphous Silicon Thin Film Solar Cells Prepared at 100 °C: Toward Flexible Building-Integrated Photovoltaics

High Hydrogen Dilution

GeSi:H films are prepared by hot-wire chemical vapor deposition (CVD) with high hydrogen dilution, DH=98%.

Effects of Hot Wire Temperature on Properties of GeSi:H Films with High Hydrogen Dilution by Hot-Wire Chemical Vapor Deposition

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Hydrogen Dilution sentence examples within hydrogen dilution ratio

hydrogen dilution ratio

The effects of hydrogen dilution ratio, defined as R = H 2 SiH 4 , on the structural, optical, and electrical properties of hydrogenated silicon, have been investigated.

Improving structural, optical, and electrical properties of μc-Si:H using non-uniform hydrogen dilution treatment on RF-PECVD prepared layers

hydrogen dilution ratio

83 eV) were prepared at 100 °C using a high hydrogen dilution ratio.

High-Performance Amorphous Silicon Thin Film Solar Cells Prepared at 100 °C: Toward Flexible Building-Integrated Photovoltaics

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10.3390/ma12010161

The intrinsic a-Si:H layer was optimized by hydrogen dilution and its structural and electrical characteristics were investigated.

Improvement of Electrical Performance in P-Channel LTPS Thin-Film Transistor with a-Si:H Surface Passivation

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10.1007/s11664-019-06965-6

The results confirm that hydrogen dilution helps in improving the microstructure of films and favours the formation of strong Si–H bonds.

Role of Hydrogen Flow Rate on Microstructure of a-Si:H(n) Films: Spectroscopic Ellipsometry Studies

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10.1134/S0023158419040153

The obtained results indicate that the butadiene/H2 oxidation process is controlled by the synergism between hydrogen dilution and chemical effects.

Effect of Hydrogen Addition on the Sooting Tendency of 1,3-Butadiene Premixed Flames

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10.4028/WWW.SCIENTIFIC.NET/MSF.966.398

From the characterization using UV-Vis spectrometer and the Tauc’s plot method, the width of the resulting energy band gap is greater if the hydrogen dilution is increased.

Analysis of Defects and Surface Roughness on the Hydrogenated Amorphous Silicon (a-Si:H) Intrinsic Thin Film for Solar Cells

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Hydrogen Dilution
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What is/are Hydrogen Dilution?

Hydrogen Dilution - The intrinsic a-Si:H layer was optimized by hydrogen dilution and its structural and electrical characteristics were investigated. [1] The results confirm that hydrogen dilution helps in improving the microstructure of films and favours the formation of strong Si–H bonds. [2] The obtained results indicate that the butadiene/H2 oxidation process is controlled by the synergism between hydrogen dilution and chemical effects. [3] From the characterization using UV-Vis spectrometer and the Tauc’s plot method, the width of the resulting energy band gap is greater if the hydrogen dilution is increased. [4]

chemical vapor deposition

In this paper, the correlation of impedance matching and optical emission spectroscopy during plasma-enhanced chemical vapor deposition (PECVD) was systematically investigated in SiH4 plasma diluted by various hydrogen dilution ratios. [1] GeSi:H films are prepared by hot-wire chemical vapor deposition (CVD) with high hydrogen dilution, DH=98%. [2] Both intrinsic and doped hydrogenated nanocrystalline silicon (nc-Si:H) thin films were prepared by plasma-enhanced chemical vapor deposition (PECVD) with various process parameters, such as a hydrogen dilution ratio, power, substrate temperature, and doping ratios of phosphorus or boron. [3]

High Hydrogen Dilution

83 eV) were prepared at 100 °C using a high hydrogen dilution ratio. [1] GeSi:H films are prepared by hot-wire chemical vapor deposition (CVD) with high hydrogen dilution, DH=98%. [2]

hydrogen dilution ratio

The effects of hydrogen dilution ratio, defined as R = H 2 SiH 4 , on the structural, optical, and electrical properties of hydrogenated silicon, have been investigated. [1] 83 eV) were prepared at 100 °C using a high hydrogen dilution ratio. [2] In this paper, the correlation of impedance matching and optical emission spectroscopy during plasma-enhanced chemical vapor deposition (PECVD) was systematically investigated in SiH4 plasma diluted by various hydrogen dilution ratios. [3] Both intrinsic and doped hydrogenated nanocrystalline silicon (nc-Si:H) thin films were prepared by plasma-enhanced chemical vapor deposition (PECVD) with various process parameters, such as a hydrogen dilution ratio, power, substrate temperature, and doping ratios of phosphorus or boron. [4]