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Graded Channel sentence examples within dual material gate



Analytical modelling and performance analysis of gate- and channel-engineered trapezoidal trigate MOSFET



An analytical drain current model for cylindrical gate DMG-GC-DOT MOSFET


Graded Channel sentence examples within Metal Graded Channel



3-D Analytical Modeling of Triple Metal Tri-Gate Graded Channel High-k SON TFET for Improved Performance



Dual metal Schottky barrier asymmetric gate stack cylindrical gate all around (DM-SB-ASMGS-CGAA) MOSFET for improved analog performance for high frequency application


Graded Channel sentence examples within Junctionles Graded Channel



Study of Analog/Rf and Stability Investigation of Surrounded Gate Junctionless Graded Channel MOSFET(SJLGC MOSFET)



Study of Analog/Rf and Stability Investigation of Surrounded Gate Junctionless Graded Channel MOSFET(SJLGC MOSFET)



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Graded Channel sentence examples within Continuously Graded Channel



Strong and tough bioinspired nacre-like B4C/Al functionally graded materials with eliminated abrupt interfaces



A novel approach for developing boron carbide (B4C)/cyanate ester (CE) co-continuous Functionally Graded Materials (FGMs) with eliminated abrupt interfaces


Graded Channel sentence examples within graded channel double



Analog/RF Performance of Triple Material Gate Stack-Graded Channel Double Gate-Junctionless Strained-Silicon MOSFET with Fixed Charges



Analog/RF Performance of Triple Material Gate Stack-Graded Channel Double Gate-Junctionless Strained-silicon MOSFET with Fixed Charges


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10.1049/IET-CDS.2018.5199

Circuit performance analysis of graded doping of channel of DGMOS with high-k gate stack for analogue and digital application


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10.1109/ACCESS.2019.2909477

A New Feedback Scheme for the State-Dependent Wiretap Channel With Noncausal State at the Transmitter


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10.1109/TIFS.2018.2868538

Physical Layer Security for RF Satellite Channels in the Finite-Length Regime


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10.1109/BCICTS45179.2019.8972753

Graded-Channel GaN-Based HEMTs for High Linearity Amplifiers at Millimeter-Wave


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10.1109/DEVIC.2019.8783284

Surface potential based Analytical Modeling of Graded Channel Strained High-k Gate stack Dual-Material Double Gate MOSFET


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10.1109/TWC.2019.2892461

Securing UAV Communications via Joint Trajectory and Power Control


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10.1109/TIT.2018.2879802

Greedy–Merge Degrading has Optimal Power-Law


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10.1109/IranianCEE.2019.8786590

Employing a Pseudo-Random Sequence to Secure a Lattice Coding Scheme


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10.1016/j.jenvman.2019.06.095

How alternative urban stream channel designs influence ecohydraulic conditions.


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