Introduction to Garnet Thin

What is/are Garnet Thin?

Garnet Thin - To date, epitaxial iron garnet thin films are the most widely used materials in the emerging field of “insulator spintronics. ^[1] In addition, a nonmonotonic compositiondependent anisotropy term is reported, which is ascribed to growth-induced anisotropy similar to what is reported in garnet thin films grown by liquidphase epitaxy. ^[2] The system utilizes the nonlinear behavior of propagating magnetostatic surface spin waves in a yttrium-iron garnet thin film and the time delay inherent in the active ring configuration to process time dependent data streams. ^[3] Rare-earth iron garnet thin films with perpendicular magnetic anisotropy (PMA) have recently attracted a great deal of attention for spintronics applications. ^[4] Here, to induce flexoelectricity, we investigate various rare-earth iron-garnet thin films deposited on lattice-mismatched substrates. ^[5] The exchange coupling between a ferromagnetic garnet thin film and a nanometer rare-earth thin film has been rarely explored. ^[6] The study of magneto-optical (MO) properties is reported in epitaxial cerium (Ce) substituted yttrium iron garnet thin films deposited on Gd 3Ga 5O 12 (GGG) substrates using pulsed laser deposition technique at (i) different O 2 partial pressure (OPP) during film deposition and (ii) with different film thickness at a given OPP. ^[7] The multiferroic layered structure consisting of the ferromagnetic yttrium iron garnet thin film with thickness of 100 µm and ferroelectric lead zirconate titanate thin film with thickness of 100 µm placed on quartz substrate with thickness of 500 µm was simulated. ^[8] Perpendicular magnetic anisotropy (PMA) in garnet thin films is important for achieving numerous spintronic applications including spin-orbit switching. ^[9] Its applicability is demonstrated on a simple design of a dual photonic-magnonic cavity, formed by sandwiching a magnetic garnet thin film between two dielectric Bragg mirrors, subject to continuous excitation of a perpendicular standing spin wave. ^[10] Different bismuth-substituted yttrium iron garnet thin films were prepared on silica substrates by metal organic decomposition of propionic salts with varied initial amounts of bismuth, annealing time, and temperature. ^[11] To this purpose, transfer matrix method was used where SiO2 and Bismuth substitute garnet thin films playing main building block and the gold or silver layer use to reach ((SiO2/Bi:YIG)n/(Au or Ag)/SiO2)m structure; where n and m are considered as the repetition and resonator numbers, respectively. ^[12] In particular, we demonstrate fully-TE broadband isolators by depositing high quality magneto-optical garnet thin films on the sidewalls of Si and SiN waveguides, a critical result for applications in TE-polarized on-chip lasers and amplifiers. ^[13] Moreover, we succeed to characterize yttrium iron garnet thin films with spatial resolution using optical ferromagnetic resonance (FMR) experiments. ^[14] In this work, we have fabricated garnet thin sheet electrolytes (Li6. ^[15]

Iron Garnet Thin

To date, epitaxial iron garnet thin films are the most widely used materials in the emerging field of “insulator spintronics. ^[1] The system utilizes the nonlinear behavior of propagating magnetostatic surface spin waves in a yttrium-iron garnet thin film and the time delay inherent in the active ring configuration to process time dependent data streams. ^[2] Rare-earth iron garnet thin films with perpendicular magnetic anisotropy (PMA) have recently attracted a great deal of attention for spintronics applications. ^[3] The study of magneto-optical (MO) properties is reported in epitaxial cerium (Ce) substituted yttrium iron garnet thin films deposited on Gd 3Ga 5O 12 (GGG) substrates using pulsed laser deposition technique at (i) different O 2 partial pressure (OPP) during film deposition and (ii) with different film thickness at a given OPP. ^[4] The multiferroic layered structure consisting of the ferromagnetic yttrium iron garnet thin film with thickness of 100 µm and ferroelectric lead zirconate titanate thin film with thickness of 100 µm placed on quartz substrate with thickness of 500 µm was simulated. ^[5] Different bismuth-substituted yttrium iron garnet thin films were prepared on silica substrates by metal organic decomposition of propionic salts with varied initial amounts of bismuth, annealing time, and temperature. ^[6] Moreover, we succeed to characterize yttrium iron garnet thin films with spatial resolution using optical ferromagnetic resonance (FMR) experiments. ^[7]

garnet thin film

To date, epitaxial iron garnet thin films are the most widely used materials in the emerging field of “insulator spintronics. ^[1] In addition, a nonmonotonic compositiondependent anisotropy term is reported, which is ascribed to growth-induced anisotropy similar to what is reported in garnet thin films grown by liquidphase epitaxy. ^[2] The system utilizes the nonlinear behavior of propagating magnetostatic surface spin waves in a yttrium-iron garnet thin film and the time delay inherent in the active ring configuration to process time dependent data streams. ^[3] Rare-earth iron garnet thin films with perpendicular magnetic anisotropy (PMA) have recently attracted a great deal of attention for spintronics applications. ^[4] Here, to induce flexoelectricity, we investigate various rare-earth iron-garnet thin films deposited on lattice-mismatched substrates. ^[5] The exchange coupling between a ferromagnetic garnet thin film and a nanometer rare-earth thin film has been rarely explored. ^[6] The study of magneto-optical (MO) properties is reported in epitaxial cerium (Ce) substituted yttrium iron garnet thin films deposited on Gd 3Ga 5O 12 (GGG) substrates using pulsed laser deposition technique at (i) different O 2 partial pressure (OPP) during film deposition and (ii) with different film thickness at a given OPP. ^[7] The multiferroic layered structure consisting of the ferromagnetic yttrium iron garnet thin film with thickness of 100 µm and ferroelectric lead zirconate titanate thin film with thickness of 100 µm placed on quartz substrate with thickness of 500 µm was simulated. ^[8] Perpendicular magnetic anisotropy (PMA) in garnet thin films is important for achieving numerous spintronic applications including spin-orbit switching. ^[9] Its applicability is demonstrated on a simple design of a dual photonic-magnonic cavity, formed by sandwiching a magnetic garnet thin film between two dielectric Bragg mirrors, subject to continuous excitation of a perpendicular standing spin wave. ^[10] Different bismuth-substituted yttrium iron garnet thin films were prepared on silica substrates by metal organic decomposition of propionic salts with varied initial amounts of bismuth, annealing time, and temperature. ^[11] To this purpose, transfer matrix method was used where SiO2 and Bismuth substitute garnet thin films playing main building block and the gold or silver layer use to reach ((SiO2/Bi:YIG)n/(Au or Ag)/SiO2)m structure; where n and m are considered as the repetition and resonator numbers, respectively. ^[12] In particular, we demonstrate fully-TE broadband isolators by depositing high quality magneto-optical garnet thin films on the sidewalls of Si and SiN waveguides, a critical result for applications in TE-polarized on-chip lasers and amplifiers. ^[13] Moreover, we succeed to characterize yttrium iron garnet thin films with spatial resolution using optical ferromagnetic resonance (FMR) experiments. ^[14]