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10.1109/DevIC50843.2021.9455911

This paper presents the impact of work function variation (WFV) in Gate-All-Around Field Effect Transistors (GAA FETs) using the technology computer-aided design (TCAD) tool for sub-7nm high-performance logic applications.

Investigation of Work Function Variation on the Electrical Performance of sub-7nm GAA FETs

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10.1007/s12633-021-00983-y

The characteristics are revealed and compared with contemporary JLGAA FETs.

A Novel Teeth Junction Less Gate All Around FET for Improving Electrical Characteristics

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10.21203/rs.3.rs-778963/v1

Horizontally stacked pure-Ge-nanosheet gate-all-around field-effect transistors (GAA FETs) were developed in this study.

Ge/Si Multilayer Epitaxy and Removal of Dislocations from Ge-nanosheet-channel MOSFETs

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10.23919/SNW.2019.8782970

Horizontally five stacked pure-Ge nanosheets (NSs) GAA FETs are demonstrated.

The GAAFETs with Five Stacked Ge Nano-sheets Made by 2D Ge/Si Multilayer Epitaxy, Excellent Selective Etching, and Conformal Monolayer Doping

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10.1109/EUROSOI-ULIS45800.2019.9041857

In addition, vertical NW/ NS GAA FETs appear particularly attractive for enabling highly dense memory cells such as SRAMs (with improved read and write stability), and as the selector devices for ultra-scaled MRAMs with lower energy consumption values.

Nanowire & Nanosheet FETs for Ultra-Scaled, High-Density Logic and Memory Applications

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What is/are Gaa Fets?

Gaa Fets - This paper presents the impact of work function variation (WFV) in Gate-All-Around Field Effect Transistors (GAA FETs) using the technology computer-aided design (TCAD) tool for sub-7nm high-performance logic applications. [1] The characteristics are revealed and compared with contemporary JLGAA FETs. [2] Horizontally stacked pure-Ge-nanosheet gate-all-around field-effect transistors (GAA FETs) were developed in this study. [3] Horizontally five stacked pure-Ge nanosheets (NSs) GAA FETs are demonstrated. [4] In addition, vertical NW/ NS GAA FETs appear particularly attractive for enabling highly dense memory cells such as SRAMs (with improved read and write stability), and as the selector devices for ultra-scaled MRAMs with lower energy consumption values. [5]
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