Introduction to Finfet Technologies

What is/are Finfet Technologies?

Finfet Technologies - The radiation testing shows evidence of interface trap build-up on 14-nm Bulk FinFET technologies. ^[1] The model is validated in 7 and 14 nm bulk FinFET technologies, and the modeled results show an excellent agreement with the measured data up to 50 GHz ( $\!\sim \!~{f} _{\mathbf {T}} \boldsymbol /4$ ). ^[2] Recent realizations of l00Gb/s wired links require advanced FinFET technologies, highcost packaging/cables and power-consuming equalization. ^[3] The performance of the 14-nm planar bulk PMOS is comparable to the performance of the FDSOI and FinFET technologies at the same gate length. ^[4] Third, this is the first demonstration of integrated power delivery for anti-fuse memory in FinFET technologies. ^[5] Compared to CMOS and FinFET technologies, the average capacity of the proposed TCAM cell is substantially enhanced. ^[6] The intrinsic device reliability including HCI, BTI, and TDDB is comparable across FinFET technologies, and would not be degraded by scaling down. ^[7] These virtual techniques will become especially valuable as novel gate-all-around devices (GAA) are introduced to replace state-of-the-art FinFET technologies. ^[8] These values can be controlled by reducing the distance between blocks, or, in the case of R, by using larger effective wire widths (using multiple parallel connections in FinFET technologies where wire widths are quantized) to reduce the effective resistance. ^[9] Then, the industry standard compact model for FinFET technologies (BSIM-CMG) is carefully calibrated to accurately model and reproduce all measurements. ^[10] A single-event-enabled compact model for bulk FinFET technologies has been developed and integrated with a process design kit (PDK) and an industry standard electronic design automation tool flow. ^[11] In this work, soft error Failure-in- Time (FIT)rates of D-Flip-Flop (D-FF)designs in 16-nm and 7-nm bulk FinFET technologies are characterized with alpha particle irradiations. ^[12] Recent progress in CMOS and FinFET technologies have allowed the deployment of multi-task System-on-Programmable Chips (SoPCs) in a single FPGA device. ^[13] In cutting edge FinFET technologies nodes, however, such swap cell approach cannot meet the aggressive process requirements, such as demanding density, and due to inter-layer dependencies in FEOL swap cell. ^[14] The results are consistent with low-LET particle irradiation findings from previous works that have indicated a strong exponential increase in SEU cross section with supply voltage scaling for FinFET technologies. ^[15] FinFET technologies are an ideal candidate to tackle this challenging integration, given the excellent balance between density and RF/mm-wave performance that has been recently demonstrated [1]. ^[16] A memory-logic hybrid gate with complementary resistive switching pairs on vias in BEOL FinFET technologies with an area-efficient, 3D-stackable structures is proposed. ^[17] The purpose of this work is to point out the main differences between a Static Random-Access Memory (SRAM) cells implemented by using Tunnel FET (TFET) and FinFET technologies. ^[18] The growth in safety-critical applications for automotive electronics and mainstream adoption of FinFET technologies have resulted in significant increase in IC design reliability challenges. ^[19] We report on Qualcomm® Snapdragon™ SDM855 mobile SoC and world's first commercial 5G platform using industry-leading 7nm FINFET technologies. ^[20] In order to design competitive circuits in finFET technologies, a designer must intelligently navigate the plethora of reliability rules, As an example, by understanding the trade-offs between transistor self-heating, Joule-heating due to Irms currents and passing Iavg rules at higher temperatures, designers can optimize the design changes required to meet overall interconnect reliability requirements. ^[21] Here simulation results confirm that CNTFET has better performance than MOS and FinFET technologies in low-power world. ^[22] The performance analysis has been carried out in a 7-nm and a 16-nm FinFET technologies, and in a 28-nm FDSOI technology, considering different input signal amplitudes, input common-mode voltage levels, process corners, and temperatures. ^[23] The proposed method is investigated using 32-nm CMOS and FinFET technologies. ^[24]

Bulk Finfet Technologies

The radiation testing shows evidence of interface trap build-up on 14-nm Bulk FinFET technologies. ^[1] The model is validated in 7 and 14 nm bulk FinFET technologies, and the modeled results show an excellent agreement with the measured data up to 50 GHz ( $\!\sim \!~{f} _{\mathbf {T}} \boldsymbol /4$ ). ^[2] A single-event-enabled compact model for bulk FinFET technologies has been developed and integrated with a process design kit (PDK) and an industry standard electronic design automation tool flow. ^[3] In this work, soft error Failure-in- Time (FIT)rates of D-Flip-Flop (D-FF)designs in 16-nm and 7-nm bulk FinFET technologies are characterized with alpha particle irradiations. ^[4]