Introduction to Chalcogenide Phase

What is/are Chalcogenide Phase?

Chalcogenide Phase - Chalcogenide phase change materials reversibly switch between non-volatile states with vastly different optical properties, enabling novel active nanophotonic devices. ^[1] Materials of which the refractive indices can be thermally tuned or switched, such as in chalcogenide phase-change alloys, offer a promising path towards the development of active optical metasurfaces for the control of the amplitude, phase, and polarization of light. ^[2] By taking advantage of the chalcogenide phase change materials that feature exceptional optical property contrasts, we further demonstrate the loss-induced mechanism to realize fast and nonvolatile responses between the EIT state and the critical coupling state in a monolithically integrated chip. ^[3] Chalcogenide phase-change materials (PCMs) show a significant contrast in optical reflectivity and electrical resistivity upon crystallization from the amorphous phase and are leading candidates for non-volatile photonic and electronic applications. ^[4] Here we report integration of chalcogenide phase change materials in the Lincoln Laboratory 8-inch Si foundry process and the demonstration of electrothermally switched phase-change photonic devices building on a wafer-scale silicon-on-insulator heater platform. ^[5] The quasi-metallic 1T'-phase is one of the notable polymorphic two-dimensional transition metal dichalcogenide phases and possesses a unique structure, comprising a one-dimensional zigzag transition metal chain along a single axis. ^[6] In this work, we perform an extensive finite-element simulation on a typical Ge2Sb2Te5 (GST), a chalcogenide phase change material, mushroom cell memory device to imitate the plasticity of biological synapses. ^[7] Actively tunable optical filters based on chalcogenide phase-change materials (PCMs) are an emerging technology with applications across chemical spectroscopy and thermal imaging. ^[8] Uniquely furnishing giant and nonvolatile modulation of optical properties and chalcogenide phase change materials (PCMs) have emerged as a promising material to transform integrated photonics and free-space optics alike. ^[9] Here, chalcogenide phase-change materials are incorporated into standard integrated photonics devices to deliver wide-ranging computational functionality, including non-volatile memory and fast, low-energy arithmetic and neuromorphic processing. ^[10] Here, we demonstrate actively tunable wavefront control with high-efficiency by combining catenary-based meta-atoms for intrinsic continuous phase regulation with the chalcogenide phase change material (PCM) of Ge2Sb2Te5. ^[11] Here, we present two prototypes of neuromorphic photonic computation units based on chalcogenide phase-change materials. ^[12] Thermally tunable optical metasurfaces based on chalcogenide phase-change materials (PCMs) - whose refractive indices between their amorphous and crystalline phases can be abruptly controlled via optical, electrical or thermal heat stimuli - are currently one of the most promising approaches towards the creation of novel, compact, and fast reconfigurable nanophotonic devices. ^[13] This is achieved through the integration of the chalcogenide phase-change material GeSbTe (GST) into a plasmonic nanohole metasurface. ^[14] Over the past 30 years or more, chalcogenide phase-change materials and devices have generated much scientific and industrial interest, particularly as a platform for non-volatile optical and electronic storage devices. ^[15] Chalcogenide phase-change materials (PCMs) offer a unique feature that can be used to dynamically control the response of the photonic devices and achieve fast, nonvolatile, reversible, multilevel, and specific optical modulation. ^[16] Chalcogenide phase change semiconductors have played a crucial role in the evolution of photonic technologies. ^[17] Chalcogenide phase change materials (PCMs) with their broadband response, non-volatile and. ^[18]

neuro inspired computing

Chalcogenide phase-change materials (PCMs) are regarded as the leading candidate for storage-class non-volatile memory and neuro-inspired computing. ^[1] By controlling the amorphous-to-crystalline relative volume, chalcogenide phase-change memory materials can provide multi-level data storage (MLS), which offers great potential for high-density storage-class memory and neuro-inspired computing. ^[2] Tailoring the degree of disorder in chalcogenide phase-change materials (PCMs) plays an essential role in nonvolatile memory devices and neuro-inspired computing. ^[3]

Embed Chalcogenide Phase

Could we, for example, store and process information directly in the optical domain, rather than having to go through time and energy consuming optical-electrical-optical conversions? It is just such capabilities that we demonstrate here, using a novel integrated photonics platform that embeds chalcogenide phase-change materials into standard silicon photonics circuits. ^[1] In this article, we show how, by using an integrated photonics platform that embeds chalcogenide phase-change materials into standard silicon photonics circuits, we can achieve some of these goals. ^[2]

Incorporating Chalcogenide Phase

We experimentally demonstrate active modulation of amplitude/phase profiles of optical wavefronts by leveraging the interplay of surface plasmon polariton and electric/magnetic Mie resonance modes in hybrid plasmonic-dielectric metasurface platforms incorporating chalcogenide phase-change materials. ^[1] Here we theoretically demonstrate a dynamic third-harmonic generation (THG) device by incorporating chalcogenide phase change material (Ge2Sb2Te5) into ultra-small cavities of gap-plasmon resonators. ^[2]

chalcogenide phase change

Chalcogenide phase change materials reversibly switch between non-volatile states with vastly different optical properties, enabling novel active nanophotonic devices. ^[1] By taking advantage of the chalcogenide phase change materials that feature exceptional optical property contrasts, we further demonstrate the loss-induced mechanism to realize fast and nonvolatile responses between the EIT state and the critical coupling state in a monolithically integrated chip. ^[2] Here we report integration of chalcogenide phase change materials in the Lincoln Laboratory 8-inch Si foundry process and the demonstration of electrothermally switched phase-change photonic devices building on a wafer-scale silicon-on-insulator heater platform. ^[3] These challenges can be partially addressed by combining chalcogenide phase change materials (PCMs) such as Ge2Sb2Te-5 (GST) with silicon photonics, especially applicable in reconfigurable optical circuit applications due to the nonvolatile nature of the GST. ^[4] This paper reports a novel millimeter-wave (mmWave) non-volatile chalcogenide phase change material (PCM) germanium telluride (GeTe) based scalable crossbar switch matrix. ^[5] In this work, we perform an extensive finite-element simulation on a typical Ge2Sb2Te5 (GST), a chalcogenide phase change material, mushroom cell memory device to imitate the plasticity of biological synapses. ^[6] Uniquely furnishing giant and nonvolatile modulation of optical properties and chalcogenide phase change materials (PCMs) have emerged as a promising material to transform integrated photonics and free-space optics alike. ^[7] Here, we demonstrate actively tunable wavefront control with high-efficiency by combining catenary-based meta-atoms for intrinsic continuous phase regulation with the chalcogenide phase change material (PCM) of Ge2Sb2Te5. ^[8] Herein, we design an asymmetric FP cavity with a pair of high- and low-activation energy chalcogenide phase change materials as the reflective layer (named as “PCM pair” FP cavity), achieving a combination of full color and multi-level transmittance modulation in a thin film. ^[9] Chalcogenide phase change semiconductors have played a crucial role in the evolution of photonic technologies. ^[10] Chalcogenide phase change materials (PCMs) with their broadband response, non-volatile and. ^[11] We report what we believe to be the first electrically reconfigurable metasurface based on chalcogenide phase change materials. ^[12] Chalcogenide phase change materials, such as $\mathrm{G}{\mathrm{e}}_{1}\mathrm{S}{\mathrm{b}}_{2}\mathrm{T}{\mathrm{e}}_{4}$ (GST), are of tremendous importance in emerging data storage technology, which takes advantage of rapid and reversible switching of GST between the amorphous and crystalline phases. ^[13] Chalcogenide phase change materials (PCMs) are promising candidates for tuning in the near infrared: at the nanoscale, thin layers can provide enough contrast to control the optical response of a nanostructure. ^[14] We report what we believe to be the first electrically reconfigurable metasurface based on chalcogenide phase change materials. ^[15] Phase change memory technology based on chalcogenide phase change materials meets many requirements of the emerging memory applications since it is fast, scalable and non-volatile. ^[16] Here we theoretically demonstrate a dynamic third-harmonic generation (THG) device by incorporating chalcogenide phase change material (Ge2Sb2Te5) into ultra-small cavities of gap-plasmon resonators. ^[17] The strikingly contrasting optical properties of various phases of chalcogenide phase change materials (PCM) has recently led to the development of novel photonic devices such as all-optical non-von Neumann memory, nanopixel displays, color rendering, and reconfigurable nanoplasmonics. ^[18] We report on pixelated, reversibly-switchable devices based on novel chalcogenide phase change materials (PCMs), Ge-Sb-Se-Te (GSST) with transparency from 1. ^[19]