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10.1007/s00339-021-04608-4

AlGaN solar-blind ultraviolet avalanche photodiodes with a p-graded AlxGa1-xN layer and high/low Al-content AlGaN multiplication layer



Multiple-quantum-well-induced unipolar carrier transport multiplication in AlGaN solar-blind ultraviolet photodiode


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10.3788/col202119.082504

Carrier transport and photoconductive gain mechanisms of AlGaN MSM photodetectors with high Al Content



A 320×256 readout circuit with wide dynamic range and high injection efficiency


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