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We design a back-illuminated p–i–n–i–n separate absorption and multiplication (SAM) AlGaN solar-blind avalanche photodiode (APD) with a low Al-content p-graded AlxGa1-xN layer and a high/low Al-content AlGaN multiplication layer.
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AlGaN solar-blind ultraviolet (SBUV) detectors have potential application in fire monitoring, corona discharge monitoring, or biological imaging.
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We have fabricated the AlGaN solar-blind ultraviolet metal–semiconductor–metal (MSM) photodetectors (PDs) with an Al composition of 0.
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35μm 2P4M mixed signal CMOS process and interfaced with AlGaN solar-blind ultraviolet focal array plane (UVFPA).
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